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M29F200BB45MT3F PDF预览

M29F200BB45MT3F

更新时间: 2024-11-09 04:19:19
品牌 Logo 应用领域
恒忆 - NUMONYX 光电二极管
页数 文件大小 规格书
29页 583K
描述
Flash, 128KX16, 45ns, PDSO44, 0.500 INCH, LEAD FREE, PLASTIC, SO-44

M29F200BB45MT3F 技术参数

生命周期:Obsolete零件包装代码:SOIC
包装说明:0.500 INCH, LEAD FREE, PLASTIC, SO-44针数:44
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.15
最长访问时间:45 ns其他特性:BOTTOM BOOT BLOCK
备用内存宽度:8启动块:BOTTOM
JESD-30 代码:R-PDSO-G44JESD-609代码:e3
长度:28.5 mm内存密度:2097152 bit
内存集成电路类型:FLASH内存宽度:16
功能数量:1端子数量:44
字数:131072 words字数代码:128000
工作模式:ASYNCHRONOUS最高工作温度:125 °C
最低工作温度:-40 °C组织:128KX16
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:PARALLEL峰值回流温度(摄氏度):245
编程电压:5 V认证状态:Not Qualified
座面最大高度:3 mm最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:AUTOMOTIVE端子面层:MATTE TIN
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:40
类型:NOR TYPE宽度:12.6 mm
Base Number Matches:1

M29F200BB45MT3F 数据手册

 浏览型号M29F200BB45MT3F的Datasheet PDF文件第2页浏览型号M29F200BB45MT3F的Datasheet PDF文件第3页浏览型号M29F200BB45MT3F的Datasheet PDF文件第4页浏览型号M29F200BB45MT3F的Datasheet PDF文件第5页浏览型号M29F200BB45MT3F的Datasheet PDF文件第6页浏览型号M29F200BB45MT3F的Datasheet PDF文件第7页 
M29F200BT  
M29F200BB  
2 Mbit (256Kb x8 or 128Kb x16, Boot Block)  
Single Supply Flash Memory  
FEATURES SUMMARY  
SINGLE 5V±10% SUPPLY VOLTAGE for  
Figure 1. Packages  
PROGRAM, ERASE and READ  
OPERATIONS  
ACCESS TIME: 45, 50, 70, 90ns  
PROGRAMMING TIME  
8µs per Byte/Word typical  
7 MEMORY BLOCKS  
1 Boot Block (Top or Bottom Location)  
2 Parameter and 4 Main Blocks  
TSOP48 (N)  
12 x 20mm  
PROGRAM/ERASE CONTROLLER  
Embedded Byte/Word Program algorithm  
Embedded Multi-Block/Chip Erase  
algorithm  
Status Register Polling and Toggle Bits  
Ready/Busy Output Pin  
44  
ERASE SUSPEND and RESUME MODES  
Read and Program another Block during  
Erase Suspend  
1
UNLOCK BYPASS PROGRAM COMMAND  
Faster Production/Batch Programming  
SO44 (MT)  
TEMPORARY BLOCK UNPROTECTION  
MODE  
LOW POWER CONSUMPTION  
Standby and Automatic Standby  
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
20 YEARS DATA RETENTION  
Defectivity below 1 ppm/year  
ELECTRONIC SIGNATURE  
Manufacturer Code: 0020h  
Top Device Code M29F200BT: 00D3h  
Bottom Device CodeM29F200BB: 00D4h  
ECOPACK® PACKAGES AVAILABLE  
September 2005  
1/29  

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