5秒后页面跳转
M29F200B-70N6RTR PDF预览

M29F200B-70N6RTR

更新时间: 2024-11-08 13:10:03
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存
页数 文件大小 规格书
33页 227K
描述
128KX16 FLASH 5V PROM, 70ns, PDSO48, 12 X 20 MM, PLASTIC, REVERSE, TSOP-48

M29F200B-70N6RTR 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:TSOP包装说明:12 X 20 MM, PLASTIC, REVERSE, TSOP-48
针数:48Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.63Is Samacsys:N
最长访问时间:70 ns其他特性:BOTTOM BOOT BLOCK
备用内存宽度:8启动块:BOTTOM
命令用户界面:YES数据轮询:YES
耐久性:100000 Write/Erase CyclesJESD-30 代码:R-PDSO-G48
JESD-609代码:e0长度:18.4 mm
内存密度:2097152 bit内存集成电路类型:FLASH
内存宽度:16功能数量:1
部门数/规模:1,2,1,3端子数量:48
字数:131072 words字数代码:128000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:128KX16
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装等效代码:TSSOP48,.8,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:5 V
编程电压:5 V认证状态:Not Qualified
就绪/忙碌:YES反向引出线:YES
座面最大高度:1.2 mm部门规模:16K,8K,32K,64K
最大待机电流:0.0001 A子类别:Flash Memories
最大压摆率:0.02 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
切换位:YES类型:NOR TYPE
宽度:12 mmBase Number Matches:1

M29F200B-70N6RTR 数据手册

 浏览型号M29F200B-70N6RTR的Datasheet PDF文件第2页浏览型号M29F200B-70N6RTR的Datasheet PDF文件第3页浏览型号M29F200B-70N6RTR的Datasheet PDF文件第4页浏览型号M29F200B-70N6RTR的Datasheet PDF文件第5页浏览型号M29F200B-70N6RTR的Datasheet PDF文件第6页浏览型号M29F200B-70N6RTR的Datasheet PDF文件第7页 
M29F200T  
M29F200B  
2 Mbit (256Kb x8 or 128Kb x16, Boot Block)  
Single Supply Flash Memory  
5V±10% SUPPLYVOLTAGEfor PROGRAM,  
ERASE and READ OPERATIONS  
FASTACCESS TIME: 55ns  
FAST PROGRAMMING TIME  
– 10 s by Byte / 16 s by Word typical  
µ
µ
44  
PROGRAM/ERASE CONTROLLER (P/E.C.)  
– Program Byte-by-Byte or Word-by-Word  
– Status Register bits and Ready/Busy Output  
MEMORY BLOCKS  
– Boot Block (Top or Bottom location)  
– Parameterand Main blocks  
1
TSOP48 (N)  
12 x 20 mm  
SO44 (M)  
BLOCK, MULTI-BLOCK and CHIP ERASE  
MULTI-BLOCKPROTECTION/TEMPORARY  
UNPROTECTION MODES  
ERASE SUSPEND and RESUME MODES  
– Read and Program another Block during  
Erase Suspend  
Figure 1. Logic Diagram  
LOW POWER CONSUMPTION  
– Stand-byand AutomaticStand-by  
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
V
CC  
20 YEARSDATARETENTION  
– Defectivity below 1ppm/year  
ELECTRONIC SIGNATURE  
– ManufacturerCode: 0020h  
– Device Code, M29F200T: 00D3h  
– Device Code, M29F200B: 00D4h  
17  
15  
A0-A16  
DQ0-DQ14  
W
DQ15A–1  
BYTE  
RB  
M29F200T  
M29F200B  
E
G
DESCRIPTION  
The M29F200 is a non-volatile memory that may  
be erased electrically at the block or chiplevel and  
programmedin-systemona Byte-by-Byteor Word-  
by-Word basis using only a single 5V VCC supply.  
For Program and Erase operations the necessary  
high voltages are generatedinternally. The device  
can also be programmed in standard program-  
mers.  
The array matrix organisationallows each block to  
be erased and reprogrammed without affecting  
other blocks. Blocks can be protectedagainst pro-  
graming and erase on programming equipment,  
and temporarily unprotected to make changes in  
the application.  
RP  
V
SS  
AI01986  
July 1998  
1/33  

与M29F200B-70N6RTR相关器件

型号 品牌 获取价格 描述 数据表
M29F200B-70N6TR STMICROELECTRONICS

获取价格

2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory
M29F200B-90M1R STMICROELECTRONICS

获取价格

2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory
M29F200B-90M1TR STMICROELECTRONICS

获取价格

2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory
M29F200B-90M3R STMICROELECTRONICS

获取价格

2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory
M29F200B-90M3TR STMICROELECTRONICS

获取价格

2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory
M29F200B-90M6R STMICROELECTRONICS

获取价格

2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory
M29F200B-90M6TR STMICROELECTRONICS

获取价格

2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory
M29F200B-90N1R STMICROELECTRONICS

获取价格

2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory
M29F200B-90N1TR STMICROELECTRONICS

获取价格

2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory
M29F200B-90N3R STMICROELECTRONICS

获取价格

2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory