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M29F200B-55M3R PDF预览

M29F200B-55M3R

更新时间： 2024-11-22 22:55:59
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存
页数 文件大小 规格书
33页 227K
描述
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory

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M29F200B-55M3R 数据手册

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M29F200T  
M29F200B  
2 Mbit (256Kb x8 or 128Kb x16, Boot Block)  
Single Supply Flash Memory  
5V±10% SUPPLYVOLTAGEfor PROGRAM,  
ERASE and READ OPERATIONS  
FASTACCESS TIME: 55ns  
FAST PROGRAMMING TIME  
– 10 s by Byte / 16 s by Word typical  
µ
µ
44  
PROGRAM/ERASE CONTROLLER (P/E.C.)  
– Program Byte-by-Byte or Word-by-Word  
– Status Register bits and Ready/Busy Output  
MEMORY BLOCKS  
– Boot Block (Top or Bottom location)  
– Parameterand Main blocks  
1
TSOP48 (N)  
12 x 20 mm  
SO44 (M)  
BLOCK, MULTI-BLOCK and CHIP ERASE  
MULTI-BLOCKPROTECTION/TEMPORARY  
UNPROTECTION MODES  
ERASE SUSPEND and RESUME MODES  
– Read and Program another Block during  
Erase Suspend  
Figure 1. Logic Diagram  
LOW POWER CONSUMPTION  
– Stand-byand AutomaticStand-by  
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
V
CC  
20 YEARSDATARETENTION  
– Defectivity below 1ppm/year  
ELECTRONIC SIGNATURE  
– ManufacturerCode: 0020h  
– Device Code, M29F200T: 00D3h  
– Device Code, M29F200B: 00D4h  
17  
15  
A0-A16  
DQ0-DQ14  
W
DQ15A–1  
BYTE  
RB  
M29F200T  
M29F200B  
E
G
DESCRIPTION  
The M29F200 is a non-volatile memory that may  
be erased electrically at the block or chiplevel and  
programmedin-systemona Byte-by-Byteor Word-  
by-Word basis using only a single 5V VCC supply.  
For Program and Erase operations the necessary  
high voltages are generatedinternally. The device  
can also be programmed in standard program-  
mers.  
The array matrix organisationallows each block to  
be erased and reprogrammed without affecting  
other blocks. Blocks can be protectedagainst pro-  
graming and erase on programming equipment,  
and temporarily unprotected to make changes in  
the application.  
RP  
V
SS  
AI01986  
July 1998  
1/33  
1234567...33

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