Datasheet > M29F105B-90XN6

M29F105B-90XN6

更新时间： 2024-11-09 10:46:35

品牌	Logo	应用领域
恒忆 - NUMONYX		可编程只读存储器光电二极管
页数	文件大小	规格书
28页	201K
描述
64KX16 FLASH 5V PROM, 90ns, PDSO40, 10 X 14 MM, PLASTIC, TSOP-40

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数据手册

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M29F105B-90XN6 数据手册

M29F105B

1 Mbit (64Kb x16, Block Erase) Single Supply Flash Memory

5V±10% SUPPLYVOLTAGEfor PROGRAM,

ERASE and READ OPERATIONS

FASTACCESS TIME: 55ns

FAST PROGRAMMING TIME: 10µs typical

PROGRAM/ERASE CONTROLLER (P/E.C.)

– Program Word-by-Word

– Status Register bits

MEMORY BLOCKS

– Boot Block (Bottom location)

– Parameterand Main blocks

BLOCK, MULTI-BLOCK and CHIP ERASE

TSOP40 (N)

10 x 14mm

MULTI-BLOCKPROTECTION/TEMPORARY

UNPROTECTION MODES

ERASE SUSPEND and RESUME MODES

– Read and Program another Block during

Erase Suspend

LOW POWER CONSUMPTION

Figure 1. Logic Diagram

– Stand-byand AutomaticStand-by

100,000 PROGRAM/ERASE CYCLES per

BLOCK

ELECTRONIC SIGNATURE

– ManufacturerCode: 0020h

– Device Code: 0087h

A0-A15

DQ0-DQ15

Table 1. Signal Names

A0-A15

Address Inputs

M29F105B

DQ0-DQ7

Data Input/Outputs, Command Inputs

Data Input/Outputs

Chip Enable

DQ8-DQ15

Output Enable

AI02115

Write Enable

V_CC

V_SS

Supply Voltage

Ground

May 1998

1/28

12 3 4 5 6 7...28

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