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M29F100BB90N1 PDF预览

M29F100BB90N1

更新时间: 2024-09-21 21:05:39
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器光电二极管内存集成电路
页数 文件大小 规格书
30页 209K
描述
64KX16 FLASH 5V PROM, 70ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48

M29F100BB90N1 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSOP包装说明:12 X 20 MM, PLASTIC, TSOP-48
针数:48Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.74最长访问时间:70 ns
其他特性:BOTTOM BOOT BLOCK备用内存宽度:8
启动块:BOTTOM命令用户界面:YES
数据轮询:YESJESD-30 代码:R-PDSO-G48
JESD-609代码:e0长度:18.4 mm
内存密度:1048576 bit内存集成电路类型:FLASH
内存宽度:16功能数量:1
部门数/规模:1,2,1,1端子数量:48
字数:65536 words字数代码:64000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:64KX16
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装等效代码:TSSOP48,.8,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:5 V
编程电压:5 V认证状态:Not Qualified
就绪/忙碌:YES座面最大高度:1.2 mm
部门规模:16K,8K,32K,64K最大待机电流:0.0001 A
子类别:Flash Memories最大压摆率:0.02 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED切换位:YES
类型:NOR TYPE宽度:12 mm
Base Number Matches:1

M29F100BB90N1 数据手册

 浏览型号M29F100BB90N1的Datasheet PDF文件第2页浏览型号M29F100BB90N1的Datasheet PDF文件第3页浏览型号M29F100BB90N1的Datasheet PDF文件第4页浏览型号M29F100BB90N1的Datasheet PDF文件第5页浏览型号M29F100BB90N1的Datasheet PDF文件第6页浏览型号M29F100BB90N1的Datasheet PDF文件第7页 
M29F100T  
M29F100B  
1 Mbit (128Kb x8 or 64Kb x16, Boot Block)  
Single Supply Flash Memory  
NOT FOR NEW DESIGN  
M29F100T and M29F100B are replaced  
respectivelyby the M29F100BT and  
M29F100BB.  
5V ± 10% SUPPLY VOLTAGE for PROGRAM,  
ERASE and READ OPERATIONS  
44  
FAST ACCESS TIME:70ns  
FAST PROGRAMMING TIME  
– 10µs by Byte / 16µs by Word typical  
PROGRAM/ERASE CONTROLLER (P/E.C.)  
– Program Byte-by-Byte or Word-by-Word  
– Status Register bits and Ready/BusyOutput  
MEMORY BLOCKS  
1
TSOP48 (N)  
12 x 20 mm  
SO44 (M)  
– Boot Block (Top or Bottom location)  
– Parameterand Main blocks  
BLOCK, MULTI-BLOCK and CHIP ERASE  
MULTI-BLOCK PROTECTION/TEMPORARY  
UNPROTECTION MODES  
ERASE SUSPEND and RESUME MODES  
Figure 1. LogicDiagram  
– Read and Program another Block during  
Erase Suspend  
LOW POWER CONSUMPTION  
– Stand-byand Automatic Stand-by  
100,000PROGRAM/ERASE CYCLES per  
BLOCK  
V
CC  
20 YEARSDATA RETENTION  
– Defectivity below 1ppm/year  
ELECTRONIC SIGNATURE  
16  
15  
A0-A15  
DQ0-DQ14  
– ManufacturerCode:0020h  
– Device Code, M29F100T:00D0h  
– Device Code, M29F100B: 00D1h  
W
E
DQ15A–1  
BYTE  
RB  
M29F100T  
M29F100B  
G
DESCRIPTION  
RP  
TheM29F100is a non-volatilememory thatmaybe  
erased electrically at the block or chip level and  
programmedin-system on a Byte-by-Byteor Word-  
by-Word basis using only a single 5V VCC supply.  
For Program and Erase operations the necessary  
high voltages are generated internally. The device  
can alsobe programmedin standardprogrammers.  
V
SS  
AI01974  
The array matrix organisation allows each block to  
be erased and reprogrammed without affecting  
other blocks.Blocks can be protected against pro-  
graming and erase on programming equipment,  
July 2000  
1/30  
Tihs is information on a productstill in production but not recommendedfor new design.  

M29F100BB90N1 替代型号

型号 品牌 替代类型 描述 数据表
AT29C1024-15TC ATMEL

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