Datasheet > 存储 > 闪存> M29F100B-120XM6R

M29F100B-120XM6R

更新时间： 2024-11-04 05:23:39

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		闪存
页数	文件大小	规格书
30页	210K
描述
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

M29F100B-120XM6R 数据手册

M29F100T

M29F100B

1 Mbit (128Kb x8 or 64Kb x16, Boot Block)

Single Supply Flash Memory

5V ± 10% SUPPLYVOLTAGEfor PROGRAM,

ERASE and READ OPERATIONS

FASTACCESS TIME: 70ns

FAST PROGRAMMING TIME

– 10 s by Byte / 16 s by Word typical

PROGRAM/ERASE CONTROLLER (P/E.C.)

– Program Byte-by-Byte or Word-by-Word

– Status Register bits and Ready/Busy Output

MEMORY BLOCKS

– Boot Block (Top or Bottom location)

– Parameterand Main blocks

TSOP48 (N)

12 x 20 mm

SO44 (M)

BLOCK, MULTI-BLOCK and CHIP ERASE

MULTI-BLOCKPROTECTION/TEMPORARY

UNPROTECTION MODES

ERASE SUSPEND and RESUME MODES

– Read and Program another Block during

Erase Suspend

Figure 1. Logic Diagram

LOW POWER CONSUMPTION

– Stand-byand AutomaticStand-by

100,000 PROGRAM/ERASE CYCLES per

BLOCK

20 YEARSDATARETENTION

– Defectivity below 1ppm/year

ELECTRONIC SIGNATURE

– ManufacturerCode: 0020h

– Device Code, M29F100T: 00D0h

– Device Code, M29F100B: 00D1h

A0-A15

DQ0-DQ14

DQ15A–1

BYTE

M29F100T

M29F100B

DESCRIPTION

The M29F100 is a non-volatile memory that may

be erased electrically at the block or chiplevel and

programmedin-systemona Byte-by-Byteor Word-

by-Word basis using only a single 5V V_CCsupply.

For Program and Erase operations the necessary

high voltages are generatedinternally. The device

can also be programmed in standard program-

mers.

The array matrix organisationallows each block to

be erased and reprogrammed without affecting

other blocks. Blocks can be protectedagainst pro-

graming and erase on programming equipment,

and temporarily unprotected to make changes in

the application. Each block can be programmed

and erased over 100,000 cycles.

AI01974

July 1998

1/30

12 3 4 5 6 7...30

中文翻译

下载PDF

与M29F100B-120XM6R相关器件

型号	品牌	获取价格	描述	数据表
M29F100-B120XM6TR	STMICROELECTRONICS	获取价格	1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory
M29F100B-120XM6TR	STMICROELECTRONICS	获取价格	1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory
M29F100-B120XN1R	STMICROELECTRONICS	获取价格	1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory
M29F100B-120XN1R	STMICROELECTRONICS	获取价格	1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory
M29F100B-120XN1RTR	STMICROELECTRONICS	获取价格	128KX8 FLASH 5V PROM, 120ns, PDSO48, 12 X 20 MM, PLASTIC, REVERSE, TSOP-48
M29F100-B120XN1TR	STMICROELECTRONICS	获取价格	1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory
M29F100B-120XN1TR	STMICROELECTRONICS	获取价格	1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory
M29F100-B120XN3R	STMICROELECTRONICS	获取价格	1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory
M29F100B-120XN3R	STMICROELECTRONICS	获取价格	1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory
M29F100B-120XN3RTR	STMICROELECTRONICS	获取价格	128KX8 FLASH 5V PROM, 120ns, PDSO48, 12 X 20 MM, PLASTIC, REVERSE, TSOP-48

与M29F100B-120XM6R相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

13
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

7
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

33
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

30

产品中心

服务支持

精选活动

关于我们

帮助中心

M29F100B-120XM6R

M29F100B-120XM6R 数据手册

与M29F100B-120XM6R相关器件

与M29F100B-120XM6R相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

M29F100B-120XM6R

M29F100B-120XM6R 数据手册

与M29F100B-120XM6R相关器件

与M29F100B-120XM6R相关文章

您还可以找

您在本页遇到什么问题？