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M29F080D90N1T

更新时间： 2024-09-19 22:07:15

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		内存集成电路光电二极管
页数	文件大小	规格书
36页	252K
描述
8 Mbit (1Mb x8, Uniform Block) 5V Supply Flash Memory

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数据手册
替代型号

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M29F080D90N1T 数据手册

M29F080D

8 Mbit (1Mb x8, Uniform Block)

5V Supply Flash Memory

PRELIMINARY DATA

FEATURES SUMMARY

■ SUPPLY VOLTAGE

Figure 1. Packages

– V = 5V ±10% for PROGRAM, ERASE and

READ OPERATIONS

■ ACCESS TIME: 55, 70, 90ns

■ PROGRAMMING TIME

– 10µs per Byte typical

■ 16 UNIFORM 64Kbyte MEMORY BLOCKS

■ PROGRAM/ERASE CONTROLLER

– Embedded Byte Program algorithms

■ ERASE SUSPEND and RESUME MODES

TSOP40 (N)

10 x 20mm

– Read and Program another Block during

Erase Suspend

■ UNLOCK BYPASS PROGRAM COMMAND

– Faster Production/Batch Programming

■ TEMPORARY BLOCK UNPROTECTION

MODE

SO44 (M)

■ COMMON FLASH INTERFACE

– 64 bit Security Code

■ LOW POWER CONSUMPTION

– Standby and Automatic Standby

■ 100,000 PROGRAM/ERASE CYCLES per

BLOCK

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Device Code: F1h

April 2002

1/36

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

12 3 4 5 6 7...36

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M29F080D90N1T 替代型号

型号	品牌	替代类型	描述	数据表
MBM29F080A-70PTN	SPANSION	功能相似	FLASH MEMORY CMOS 8M (1M x 8) BIT

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