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M29F080D90N1E PDF预览

M29F080D90N1E

更新时间: 2024-11-04 05:01:03
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存存储内存集成电路光电二极管
页数 文件大小 规格书
37页 606K
描述
8 Mbit (1Mb x8, Uniform Block) 5V Supply Flash Memory

M29F080D90N1E 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:TSOP包装说明:10 X 20 MM, LEAD FREE, PLASTIC, TSOP-40
针数:40Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.24Is Samacsys:N
最长访问时间:70 nsJESD-30 代码:R-PDSO-G40
JESD-609代码:e3长度:18.4 mm
内存密度:8388608 bit内存集成电路类型:FLASH
内存宽度:8功能数量:1
端子数量:40字数:1048576 words
字数代码:1000000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:1MX8封装主体材料:PLASTIC/EPOXY
封装代码:TSOP1封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):260编程电压:5 V
认证状态:Not Qualified座面最大高度:1.2 mm
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin (Sn)端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40类型:NOR TYPE
宽度:10 mmBase Number Matches:1

M29F080D90N1E 数据手册

 浏览型号M29F080D90N1E的Datasheet PDF文件第2页浏览型号M29F080D90N1E的Datasheet PDF文件第3页浏览型号M29F080D90N1E的Datasheet PDF文件第4页浏览型号M29F080D90N1E的Datasheet PDF文件第5页浏览型号M29F080D90N1E的Datasheet PDF文件第6页浏览型号M29F080D90N1E的Datasheet PDF文件第7页 
M29F080D  
8 Mbit (1Mb x8, Uniform Block)  
5V Supply Flash Memory  
FEATURES SUMMARY  
SUPPLY VOLTAGE  
Figure 1. Packages  
– VCC = 5V ±10% for PROGRAM, ERASE and  
READ OPERATIONS  
ACCESS TIME: 55, 70, 90ns  
PROGRAMMING TIME  
– 10µs per Byte typical  
16 UNIFORM 64Kbyte MEMORY BLOCKS  
PROGRAM/ERASE CONTROLLER  
– Embedded Byte Program algorithms  
ERASE SUSPEND and RESUME MODES  
TSOP40 (N)  
10 x 20mm  
– Read and Program another Block during  
Erase Suspend  
UNLOCK BYPASS PROGRAM COMMAND  
– Faster Production/Batch Programming  
TEMPORARY BLOCK UNPROTECTION  
MODE  
SO44 (M)  
COMMON FLASH INTERFACE  
– 64 bit Security Code  
LOW POWER CONSUMPTION  
– Standby and Automatic Standby  
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 20h  
– Device Code: F1h  
ECOPACK® PACKAGES AVAILABLE  
September 2005  
1/37  

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