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M29F080A90N1TR PDF预览

M29F080A90N1TR

更新时间: 2024-09-21 10:09:55
品牌 Logo 应用领域
恒忆 - NUMONYX 可编程只读存储器光电二极管
页数 文件大小 规格书
21页 131K
描述
1MX8 FLASH 5V PROM, 90ns, PDSO40, 10 X 20 MM, PLASTIC, TSOP-40

M29F080A90N1TR 数据手册

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M29F080A  
8 Mbit (1Mb x8, Uniform Block) Single Supply Flash Memory  
SINGLE 5V±10% SUPPLY VOLTAGE for  
PROGRAM, ERASE and READ OPERATIONS  
ACCESS TIME: 70ns  
PROGRAMMING TIME  
– 8µs by Byte typical  
44  
16 UNIFORM 64 Kbyte MEMORY BLOCKS  
PROGRAM/ERASE CONTROLLER  
1
– Embedded Byte Program algorithm  
TSOP40 (N)  
10 x 20mm  
SO44 (M)  
– Embedded Multi-Block/Chip Erase algorithm  
– Status Register Polling and Toggle Bits  
– Ready/Busy Output Pin  
ERASE SUSPEND and RESUME MODES  
– Read and Program another Block during  
Erase Suspend  
Figure 1. Logic Diagram  
TEMPORARY BLOCK UNPROTECTION  
MODE  
LOW POWER CONSUMPTION  
V
CC  
– Standby and Automatic Standby  
100,000 PROGRAM/ERASE CYCLES per  
20  
8
BLOCK  
A0-A19  
DQ0-DQ7  
20 YEARS DATA RETENTION  
– Defectivity below 1 ppm/year  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 20h  
– Device Code: F1h  
W
M29F080A  
E
G
RB  
RP  
V
SS  
AI00501C  
April 2000  
1/21  

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