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M29F040B45N1T PDF预览

M29F040B45N1T

更新时间: 2024-11-04 05:01:03
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存存储内存集成电路光电二极管
页数 文件大小 规格书
21页 180K
描述
4 Mbit (512Kb x8, Uniform Block) Single Supply Flash Memory

M29F040B45N1T 技术参数

是否Rohs认证:符合生命周期:Transferred
零件包装代码:TSOP包装说明:8 X 20 MM, PLASTIC, TSOP-32
针数:32Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.37Is Samacsys:N
最长访问时间:45 ns命令用户界面:YES
数据轮询:YES耐久性:100000 Write/Erase Cycles
JESD-30 代码:R-PDSO-G32JESD-609代码:e3
长度:18.4 mm内存密度:4194304 bit
内存集成电路类型:FLASH内存宽度:8
功能数量:1部门数/规模:8
端子数量:32字数:524288 words
字数代码:512000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:512KX8封装主体材料:PLASTIC/EPOXY
封装代码:TSOP1封装等效代码:TSSOP32,.8,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):260
电源:5 V编程电压:5 V
认证状态:Not Qualified座面最大高度:1.2 mm
部门规模:64K最大待机电流:0.0001 A
子类别:Flash Memories最大压摆率:0.02 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:MATTE TIN端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED切换位:YES
类型:NOR TYPE宽度:8 mm
Base Number Matches:1

M29F040B45N1T 数据手册

 浏览型号M29F040B45N1T的Datasheet PDF文件第2页浏览型号M29F040B45N1T的Datasheet PDF文件第3页浏览型号M29F040B45N1T的Datasheet PDF文件第4页浏览型号M29F040B45N1T的Datasheet PDF文件第5页浏览型号M29F040B45N1T的Datasheet PDF文件第6页浏览型号M29F040B45N1T的Datasheet PDF文件第7页 
M29F040B  
4 Mbit (512Kb x8, Uniform Block) Single Supply Flash Memory  
SINGLE 5V ± 10% SUPPLY VOLTAGE for  
PROGRAM, ERASE and READ OPERATIONS  
ACCESS TIME: 45ns  
PROGRAMMING TIME  
– 8 µs per Byte typical  
8 UNIFORM 64 Kbytes MEMORY BLOCKS  
PLCC32 (K)  
TSOP32 (N)  
8 x 20mm  
PROGRAM/ERASE CONTROLLER  
– Embedded Byte Program algorithm  
– Embedded Multi-Block/Chip Erase algorithm  
– Status Register Polling and Toggle Bits  
ERASE SUSPEND and RESUME MODES  
– Read and Program another Block during  
Erase Suspend  
32  
1
UNLOCK BYPASS PROGRAM COMMAND  
– Faster Production/Batch Programming  
LOW POWER CONSUMPTION  
PDIP32 (P)  
– Standby and Automatic Standby  
100,000 PROGRAM/ERASE CYCLES per  
Figure 1. Logic Diagram  
BLOCK  
20 YEARS DATA RETENTION  
– Defectivity below 1 ppm/year  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 20h  
– Device Code: E2h  
V
CC  
19  
8
A0-A18  
DQ0-DQ7  
W
E
M29F040B  
G
V
SS  
AI02900  
April 2002  
1/21  

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