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M29F040-120XN5R PDF预览

M29F040-120XN5R

更新时间: 2024-11-07 22:57:39
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存存储内存集成电路光电二极管
页数 文件大小 规格书
31页 234K
描述
4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory

M29F040-120XN5R 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSOP包装说明:TSOP1-R, TSSOP32,.8,20
针数:32Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.32Is Samacsys:N
最长访问时间:120 ns其他特性:100000 ERASE/PROGRAM CYCLES; 20 YEARS DATA RETENTION; BLOCK ERASE; BYTE PROGRAMMABLE
命令用户界面:YES数据轮询:YES
数据保留时间-最小值:20耐久性:100000 Write/Erase Cycles
JESD-30 代码:R-PDSO-G32JESD-609代码:e0
长度:18.4 mm内存密度:4194304 bit
内存集成电路类型:FLASH内存宽度:8
功能数量:1部门数/规模:8
端子数量:32字数:524288 words
字数代码:512000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-20 °C
组织:512KX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1-R
封装等效代码:TSSOP32,.8,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:5 V
编程电压:5 V认证状态:Not Qualified
反向引出线:YES座面最大高度:1.2 mm
部门规模:64K最大待机电流:0.0001 A
子类别:Flash Memories最大压摆率:0.06 mA
最大供电电压 (Vsup):5.25 V最小供电电压 (Vsup):4.75 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:OTHER
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED切换位:YES
类型:NOR TYPE宽度:8 mm
Base Number Matches:1

M29F040-120XN5R 数据手册

 浏览型号M29F040-120XN5R的Datasheet PDF文件第2页浏览型号M29F040-120XN5R的Datasheet PDF文件第3页浏览型号M29F040-120XN5R的Datasheet PDF文件第4页浏览型号M29F040-120XN5R的Datasheet PDF文件第5页浏览型号M29F040-120XN5R的Datasheet PDF文件第6页浏览型号M29F040-120XN5R的Datasheet PDF文件第7页 
M29F040  
4 Mbit (512Kb x8, Uniform Block) Single Supply Flash Memory  
NOT FOR NEW DESIGN  
M29F040 is replaced by the M29F040B  
5V ± 10% SUPPLY VOLTAGE for PROGRAM,  
ERASE and READ OPERATIONS  
FAST ACCESS TIME: 70ns  
BYTE PROGRAMMING TIME: 10µs typical  
ERASE TIME  
– Block: 1.0 sec typical  
– Chip: 2.5 sec typical  
PROGRAM/ERASE CONTROLLER (P/E.C.)  
– Program Byte-by-Byte  
– Data Polling and Toggle bits Protocol for  
P/E.C. Status  
PLCC32 (K)  
TSOP32 (N)  
8 x 20 mm  
MEMORY ERASE in BLOCKS  
– 8 Uniform Blocks of 64 KBytes each  
– Block Protection  
Figure 1. Logic Diagram  
– Multiblock Erase  
ERASE SUSPEND and RESUME MODES  
LOW POWER CONSUMPTION  
– Read mode: 8mA typical (at 12MHz)  
– Stand-by mode: 25µA typical  
– Automatic Stand-by mode  
V
CC  
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
20 YEARS DATA RETENTION  
– Defectivity below 1ppm/year  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 20h  
– Device Code: E2h  
19  
8
A0-A18  
DQ0-DQ7  
W
E
M29F040  
Table 1. Signal Names  
G
A0-A18  
Address Inputs  
Data Input / Outputs  
Chip Enable  
DQ0-DQ7  
E
V
SS  
AI01372  
G
Output Enable  
Write Enable  
Supply Voltage  
Ground  
W
VCC  
VSS  
November 1999  
1/31  
This is information on a product still in production but not recommended for new designs.  

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