Datasheet > M29F016B55M3

M29F016B55M3

更新时间： 2024-09-17 04:52:35

品牌	Logo	应用领域
恒忆 - NUMONYX		光电二极管
页数	文件大小	规格书
22页	184K
描述
Flash, 2MX8, 55ns, PDSO44, 0.525 INCH, PLASTIC, SO-44

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M29F016B55M3 数据手册

M29F016B

16 Mbit (2Mb x8, Uniform Block) Single Supply Flash Memory

■ SINGLE 5V±10% SUPPLY VOLTAGE for

PROGRAM, ERASE and READ OPERATIONS

■ ACCESS TIME: 55ns

■ PROGRAMMING TIME

– 8µs by Byte typical

■ 32 UNIFORM 64 Kbyte MEMORY BLOCKS

■ PROGRAM/ERASE CONTROLLER

– Embedded Byte Program algorithm

TSOP40 (N)

10 x 20mm

SO44 (M)

– Embedded Multi-Block/Chip Erase algorithm

– Status Register Polling and Toggle Bits

– Ready/Busy Output Pin

■ ERASE SUSPEND and RESUME MODES

– Read and Program another Block during

Erase Suspend

Figure 1. Logic Diagram

■ TEMPORARY BLOCK UNPROTECTION

MODE

■ UNLOCK BYPASS PROGRAM COMMAND

– Faster Production/Batch Programming

■ LOW POWER CONSUMPTION

– Standby and Automatic Standby

A0-A20

DQ0-DQ7

■ 100,000 PROGRAM/ERASE CYCLES per

BLOCK

■ 20 YEARS DATA RETENTION

– Defectivity below 1 ppm/year

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Device Code: ADh

M29F016B

AI02964

March 2000

1/22

12 3 4 5 6 7...22

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M29F016B55N1	NUMONYX	获取价格	Flash, 2MX8, 55ns, PDSO40, 10 X 20 MM, PLASTIC, TSOP-40
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