5秒后页面跳转
M29F010B45N1F PDF预览

M29F010B45N1F

更新时间: 2024-09-13 22:57:39
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存
页数 文件大小 规格书
20页 405K
描述
1 Mbit 128Kb x8, Uniform Block Single Supply Flash Memory

M29F010B45N1F 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TSOP包装说明:8 X 20 MM, LEAD FREE, PLASTIC, TSOP-32
针数:32Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.56最长访问时间:45 ns
命令用户界面:YES数据轮询:YES
耐久性:100000 Write/Erase CyclesJESD-30 代码:R-PDSO-G32
JESD-609代码:e3/e6长度:18.4 mm
内存密度:1048576 bit内存集成电路类型:FLASH
内存宽度:8功能数量:1
部门数/规模:8端子数量:32
字数:131072 words字数代码:128000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:128KX8
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装等效代码:TSSOP32,.8,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH并行/串行:PARALLEL
峰值回流温度(摄氏度):260电源:5 V
编程电压:5 V认证状态:Not Qualified
座面最大高度:1.2 mm部门规模:16K
最大待机电流:0.0001 A子类别:Flash Memories
最大压摆率:0.02 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:TIN/TIN BISMUTH
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:40
切换位:YES类型:NOR TYPE
宽度:8 mm

M29F010B45N1F 数据手册

 浏览型号M29F010B45N1F的Datasheet PDF文件第2页浏览型号M29F010B45N1F的Datasheet PDF文件第3页浏览型号M29F010B45N1F的Datasheet PDF文件第4页浏览型号M29F010B45N1F的Datasheet PDF文件第5页浏览型号M29F010B45N1F的Datasheet PDF文件第6页浏览型号M29F010B45N1F的Datasheet PDF文件第7页 
M29F010B  
1 Mbit (128Kb x8, Uniform Block) Single Supply Flash Memory  
SINGLE 5V±10% SUPPLY VOLTAGE for  
PROGRAM, ERASE and READ OPERATIONS  
ACCESS TIME: 45 ns  
PROGRAMMING TIME  
– 8 µs per Byte typical  
8 UNIFORM 16 KBytes MEMORY BLOCKS  
PLCC32 (K)  
TSOP32 (N)  
8 x 20mm  
PROGRAM/ERASE CONTROLLER  
– Embedded Byte Program algorithm  
– Embedded Multi-Block/Chip Erase algorithm  
– Status Register Polling and Toggle Bits  
ERASE SUSPEND and RESUME MODES  
– Read and Program another Block during  
Erase Suspend  
Figure 1. Logic Diagram  
UNLOCK BYPASS PROGRAM COMMAND  
– Faster Production/Batch Programming  
LOW POWER CONSUMPTION  
V
CC  
– Standby and Automatic Standby  
17  
8
100,000 PROGRAM/ERASE CYCLES per  
A0-A16  
DQ0-DQ7  
BLOCK  
20 YEARS DATA RETENTION  
– Defectivity below 1 ppm/year  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 20h  
W
E
M29F010B  
G
– Device Code: 20h  
ECOPACK® PACKAGES AVAILABLE  
V
SS  
AI02735  
September 2005  
1/20  

与M29F010B45N1F相关器件

型号 品牌 获取价格 描述 数据表
M29F010B45N1T STMICROELECTRONICS

获取价格

1 Mbit 128Kb x8, Uniform Block Single Supply Flash Memory
M29F010B45N3 STMICROELECTRONICS

获取价格

1 Mbit 128Kb x8, Uniform Block Single Supply Flash Memory
M29F010B45N3E STMICROELECTRONICS

获取价格

1 Mbit 128Kb x8, Uniform Block Single Supply Flash Memory
M29F010B45N3F STMICROELECTRONICS

获取价格

1 Mbit 128Kb x8, Uniform Block Single Supply Flash Memory
M29F010B45N3T STMICROELECTRONICS

获取价格

1 Mbit 128Kb x8, Uniform Block Single Supply Flash Memory
M29F010B45N6 STMICROELECTRONICS

获取价格

1 Mbit 128Kb x8, Uniform Block Single Supply Flash Memory
M29F010B45N6E STMICROELECTRONICS

获取价格

1 Mbit 128Kb x8, Uniform Block Single Supply Flash Memory
M29F010B45N6F STMICROELECTRONICS

获取价格

1 Mbit 128Kb x8, Uniform Block Single Supply Flash Memory
M29F010B45N6T STMICROELECTRONICS

获取价格

1 Mbit 128Kb x8, Uniform Block Single Supply Flash Memory
M29F010B45P1T STMICROELECTRONICS

获取价格

1 Mbit 128Kb x8, Uniform Block Single Supply Flash Memory