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M29F010B45K3E PDF预览

M29F010B45K3E

更新时间: 2024-09-13 22:07:03
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存
页数 文件大小 规格书
20页 405K
描述
1 Mbit 128Kb x8, Uniform Block Single Supply Flash Memory

M29F010B45K3E 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:QFJ
包装说明:LEAD FREE, PLASTIC, LCC-32针数:32
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.7
最长访问时间:45 ns命令用户界面:YES
数据轮询:YES耐久性:100000 Write/Erase Cycles
JESD-30 代码:R-PQCC-J32JESD-609代码:e3
长度:13.97 mm内存密度:1048576 bit
内存集成电路类型:FLASH内存宽度:8
功能数量:1部门数/规模:8
端子数量:32字数:131072 words
字数代码:128000工作模式:ASYNCHRONOUS
最高工作温度:125 °C最低工作温度:-40 °C
组织:128KX8封装主体材料:PLASTIC/EPOXY
封装代码:QCCJ封装等效代码:LDCC32,.5X.6
封装形状:RECTANGULAR封装形式:CHIP CARRIER
并行/串行:PARALLEL峰值回流温度(摄氏度):250
电源:5 V编程电压:5 V
认证状态:Not Qualified座面最大高度:3.56 mm
部门规模:16K最大待机电流:0.0001 A
子类别:Flash Memories最大压摆率:0.02 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子面层:MATTE TIN端子形式:J BEND
端子节距:1.27 mm端子位置:QUAD
处于峰值回流温度下的最长时间:40切换位:YES
类型:NOR TYPE宽度:11.43 mm
Base Number Matches:1

M29F010B45K3E 数据手册

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M29F010B  
1 Mbit (128Kb x8, Uniform Block) Single Supply Flash Memory  
SINGLE 5V±10% SUPPLY VOLTAGE for  
PROGRAM, ERASE and READ OPERATIONS  
ACCESS TIME: 45 ns  
PROGRAMMING TIME  
– 8 µs per Byte typical  
8 UNIFORM 16 KBytes MEMORY BLOCKS  
PLCC32 (K)  
TSOP32 (N)  
8 x 20mm  
PROGRAM/ERASE CONTROLLER  
– Embedded Byte Program algorithm  
– Embedded Multi-Block/Chip Erase algorithm  
– Status Register Polling and Toggle Bits  
ERASE SUSPEND and RESUME MODES  
– Read and Program another Block during  
Erase Suspend  
Figure 1. Logic Diagram  
UNLOCK BYPASS PROGRAM COMMAND  
– Faster Production/Batch Programming  
LOW POWER CONSUMPTION  
V
CC  
– Standby and Automatic Standby  
17  
8
100,000 PROGRAM/ERASE CYCLES per  
A0-A16  
DQ0-DQ7  
BLOCK  
20 YEARS DATA RETENTION  
– Defectivity below 1 ppm/year  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 20h  
W
E
M29F010B  
G
– Device Code: 20h  
ECOPACK® PACKAGES AVAILABLE  
V
SS  
AI02735  
September 2005  
1/20  

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