5秒后页面跳转
M29F010B45K1T PDF预览

M29F010B45K1T

更新时间: 2024-11-22 22:07:03
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存存储内存集成电路
页数 文件大小 规格书
20页 405K
描述
1 Mbit 128Kb x8, Uniform Block Single Supply Flash Memory

M29F010B45K1T 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:QFJ
包装说明:PLASTIC, LCC-32针数:32
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.71
Is Samacsys:N最长访问时间:45 ns
命令用户界面:YES数据轮询:YES
耐久性:100000 Write/Erase CyclesJESD-30 代码:R-PQCC-J32
JESD-609代码:e0长度:13.97 mm
内存密度:1048576 bit内存集成电路类型:FLASH
内存宽度:8功能数量:1
部门数/规模:8端子数量:32
字数:131072 words字数代码:128000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:128KX8
封装主体材料:PLASTIC/EPOXY封装代码:QCCJ
封装等效代码:LDCC32,.5X.6封装形状:RECTANGULAR
封装形式:CHIP CARRIER并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:5 V
编程电压:5 V认证状态:Not Qualified
座面最大高度:3.56 mm部门规模:16K
最大待机电流:0.0001 A子类别:Flash Memories
最大压摆率:0.02 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:J BEND端子节距:1.27 mm
端子位置:QUAD处于峰值回流温度下的最长时间:NOT SPECIFIED
切换位:YES类型:NOR TYPE
宽度:11.43 mmBase Number Matches:1

M29F010B45K1T 数据手册

 浏览型号M29F010B45K1T的Datasheet PDF文件第2页浏览型号M29F010B45K1T的Datasheet PDF文件第3页浏览型号M29F010B45K1T的Datasheet PDF文件第4页浏览型号M29F010B45K1T的Datasheet PDF文件第5页浏览型号M29F010B45K1T的Datasheet PDF文件第6页浏览型号M29F010B45K1T的Datasheet PDF文件第7页 
M29F010B  
1 Mbit (128Kb x8, Uniform Block) Single Supply Flash Memory  
SINGLE 5V±10% SUPPLY VOLTAGE for  
PROGRAM, ERASE and READ OPERATIONS  
ACCESS TIME: 45 ns  
PROGRAMMING TIME  
– 8 µs per Byte typical  
8 UNIFORM 16 KBytes MEMORY BLOCKS  
PLCC32 (K)  
TSOP32 (N)  
8 x 20mm  
PROGRAM/ERASE CONTROLLER  
– Embedded Byte Program algorithm  
– Embedded Multi-Block/Chip Erase algorithm  
– Status Register Polling and Toggle Bits  
ERASE SUSPEND and RESUME MODES  
– Read and Program another Block during  
Erase Suspend  
Figure 1. Logic Diagram  
UNLOCK BYPASS PROGRAM COMMAND  
– Faster Production/Batch Programming  
LOW POWER CONSUMPTION  
V
CC  
– Standby and Automatic Standby  
17  
8
100,000 PROGRAM/ERASE CYCLES per  
A0-A16  
DQ0-DQ7  
BLOCK  
20 YEARS DATA RETENTION  
– Defectivity below 1 ppm/year  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 20h  
W
E
M29F010B  
G
– Device Code: 20h  
ECOPACK® PACKAGES AVAILABLE  
V
SS  
AI02735  
September 2005  
1/20  

与M29F010B45K1T相关器件

型号 品牌 获取价格 描述 数据表
M29F010B45K3 STMICROELECTRONICS

获取价格

1 Mbit 128Kb x8, Uniform Block Single Supply Flash Memory
M29F010B45K3E STMICROELECTRONICS

获取价格

1 Mbit 128Kb x8, Uniform Block Single Supply Flash Memory
M29F010B45K3F STMICROELECTRONICS

获取价格

1 Mbit 128Kb x8, Uniform Block Single Supply Flash Memory
M29F010B45K3T STMICROELECTRONICS

获取价格

1 Mbit 128Kb x8, Uniform Block Single Supply Flash Memory
M29F010B45K6 STMICROELECTRONICS

获取价格

1 Mbit 128Kb x8, Uniform Block Single Supply Flash Memory
M29F010B45K6E STMICROELECTRONICS

获取价格

1 Mbit 128Kb x8, Uniform Block Single Supply Flash Memory
M29F010B45K6F STMICROELECTRONICS

获取价格

1 Mbit 128Kb x8, Uniform Block Single Supply Flash Memory
M29F010B45K6T STMICROELECTRONICS

获取价格

1 Mbit 128Kb x8, Uniform Block Single Supply Flash Memory
M29F010B45N1 STMICROELECTRONICS

获取价格

1 Mbit 128Kb x8, Uniform Block Single Supply Flash Memory
M29F010B45N1E STMICROELECTRONICS

获取价格

1 Mbit 128Kb x8, Uniform Block Single Supply Flash Memory