M29F010B120N6T

更新时间： 2024-09-13 22:57:39

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		闪存
页数	文件大小	规格书
20页	405K
描述
1 Mbit 128Kb x8, Uniform Block Single Supply Flash Memory

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M29F010B120N6T 数据手册

M29F010B

1 Mbit (128Kb x8, Uniform Block) Single Supply Flash Memory

■ SINGLE 5V±10% SUPPLY VOLTAGE for

PROGRAM, ERASE and READ OPERATIONS

■ ACCESS TIME: 45 ns

■ PROGRAMMING TIME

– 8 µs per Byte typical

■ 8 UNIFORM 16 KBytes MEMORY BLOCKS

PLCC32 (K)

TSOP32 (N)

8 x 20mm

■ PROGRAM/ERASE CONTROLLER

– Embedded Byte Program algorithm

– Embedded Multi-Block/Chip Erase algorithm

– Status Register Polling and Toggle Bits

■ ERASE SUSPEND and RESUME MODES

– Read and Program another Block during

Erase Suspend

Figure 1. Logic Diagram

■ UNLOCK BYPASS PROGRAM COMMAND

– Faster Production/Batch Programming

■ LOW POWER CONSUMPTION

– Standby and Automatic Standby

■ 100,000 PROGRAM/ERASE CYCLES per

A0-A16

DQ0-DQ7

BLOCK

■ 20 YEARS DATA RETENTION

– Defectivity below 1 ppm/year

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

M29F010B

– Device Code: 20h

■ ECOPACK^®PACKAGES AVAILABLE

AI02735

September 2005

1/20

12 3 4 5 6 7...20

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