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M29DW640F70ZE1 PDF预览

M29DW640F70ZE1

更新时间: 2024-11-26 05:01:03
品牌 Logo 应用领域
恒忆 - NUMONYX 闪存
页数 文件大小 规格书
74页 1481K
描述
64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory

M29DW640F70ZE1 数据手册

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M29DW640F  
64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block)  
3V Supply Flash Memory  
Feature summary  
Supply voltage  
– VCC = 2.7V to 3.6V for Program, Erase and  
Read  
– VPP =12V for Fast Program (optional)  
Asynchronous Page Read mode  
– Page Width 8 Words  
– Page Access 25, 30ns  
– Random Access 60, 70ns  
TSOP48 (N)  
12 x 20mm  
Programming time  
– 10µs per Byte/Word typical  
– 4 Words / 8 Bytes at-a-time Program  
FBGA  
Memory blocks  
– Quadruple Bank Memory Array:  
8Mbit+24Mbit+24Mbit+8Mbit  
TFBGA48 (ZE)  
6 x 8 mm  
– Parameter Blocks (at both Top and Bottom)  
Dual operations  
– While Program or Erase in a group of  
banks (from 1 to 3), Read in any of the  
other banks  
Low power consumption  
– Standby and Automatic Standby  
100,000 Program/Erase cycles per block  
Program/Erase Suspend and Resume  
Electronic Signature  
– Read from any Block during Program  
Suspend  
– Manufacturer Code: 0020h  
– Device Code: 227Eh + 2202h + 2201  
ECOPACK® packages available  
– Read and Program another Block during  
Erase Suspend  
Unlock Bypass Program command  
– Faster Production/Batch Programming  
VPP/WP pin for Fast Program and Write Protect  
Temporary Block Unprotection mode  
Common Flash Interface  
– 64 bit Security Code  
Extended Memory Block  
– Extra block used as security block or to  
store additional information  
December 2007  
Rev 4  
1/74  
www.numonyx.com  
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