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M29DW640D70ZA6T

更新时间： 2024-11-18 22:57:39

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		闪存
页数	文件大小	规格书
56页	948K
描述
64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory

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数据手册

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M29DW640D70ZA6T 数据手册

M29DW640D

64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block)

3V Supply Flash Memory

FEATURES SUMMARY

■

SUPPLY VOLTAGE

Figure 1. Packages

–

V_CC= 2.7V to 3.6V for Program, Erase

and Read

–

V_PP=12V for Fast Program (optional)

■

ASYNCHRONOUS PAGE READ MODE

–

Page Width 4 Words

Page Access 25, 30ns

Random Access 70, 90ns

TSOP48 (N)

12 x 20mm

■

PROGRAMMING TIME

–

10µs per Byte/Word typical

4 Words / 8 Bytes at-a-time Program

FBGA

MEMORY BLOCKS

–

Quadruple Bank Memory Array:

8Mbit+24Mbit+24Mbit+8Mbit

TFBGA63 (ZA)

7 x 11mm

–

Parameter Blocks (at both Top and

Bottom)

■

DUAL OPERATIONS

–

While Program or Erase in a group of

banks (from 1 to 3), Read in any of the

other banks

■

LOW POWER CONSUMPTION

–

Standby and Automatic Standby

■

100,000 PROGRAM/ERASE CYCLES per

BLOCK

ELECTRONIC SIGNATURE

PROGRAM/ ERASE SUSPEND and

RESUME MODES

–

Read from any Block during Program

Suspend

–

Manufacturer Code: 0020h

Device Code: 227Eh + 2202h + 2201h

–

Read and Program another Block during

Erase Suspend

■

UNLOCK BYPASS PROGRAM COMMAND

Faster Production/Batch Programming

–

■

V_PP/WP PIN for FAST PROGRAM and

WRITE PROTECT

TEMPORARY BLOCK UNPROTECTION

MODE

COMMON FLASH INTERFACE

–

64 bit Security Code

■

EXTENDED MEMORY BLOCK

–

Extra block used as security block or to

store additional information

December 2004

1/56

12 3 4 5 6 7...56

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