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M29DW640D70N6 PDF预览

M29DW640D70N6

更新时间: 2024-11-22 22:57:39
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存内存集成电路光电二极管
页数 文件大小 规格书
56页 948K
描述
64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory

M29DW640D70N6 数据手册

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M29DW640D  
64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block)  
3V Supply Flash Memory  
FEATURES SUMMARY  
SUPPLY VOLTAGE  
Figure 1. Packages  
VCC = 2.7V to 3.6V for Program, Erase  
and Read  
VPP =12V for Fast Program (optional)  
ASYNCHRONOUS PAGE READ MODE  
Page Width 4 Words  
Page Access 25, 30ns  
Random Access 70, 90ns  
TSOP48 (N)  
12 x 20mm  
PROGRAMMING TIME  
10µs per Byte/Word typical  
4 Words / 8 Bytes at-a-time Program  
FBGA  
MEMORY BLOCKS  
Quadruple Bank Memory Array:  
8Mbit+24Mbit+24Mbit+8Mbit  
TFBGA63 (ZA)  
7 x 11mm  
Parameter Blocks (at both Top and  
Bottom)  
DUAL OPERATIONS  
While Program or Erase in a group of  
banks (from 1 to 3), Read in any of the  
other banks  
LOW POWER CONSUMPTION  
Standby and Automatic Standby  
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
ELECTRONIC SIGNATURE  
PROGRAM/ ERASE SUSPEND and  
RESUME MODES  
Read from any Block during Program  
Suspend  
Manufacturer Code: 0020h  
Device Code: 227Eh + 2202h + 2201h  
Read and Program another Block during  
Erase Suspend  
UNLOCK BYPASS PROGRAM COMMAND  
Faster Production/Batch Programming  
VPP/WP PIN for FAST PROGRAM and  
WRITE PROTECT  
TEMPORARY BLOCK UNPROTECTION  
MODE  
COMMON FLASH INTERFACE  
64 bit Security Code  
EXTENDED MEMORY BLOCK  
Extra block used as security block or to  
store additional information  
December 2004  
1/56  

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