5秒后页面跳转
M29DW324DT90N6 PDF预览

M29DW324DT90N6

更新时间: 2024-11-19 05:01:03
品牌 Logo 应用领域
恒忆 - NUMONYX 闪存存储内存集成电路光电二极管
页数 文件大小 规格书
50页 1295K
描述
32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block) 3V Supply Flash Memory

M29DW324DT90N6 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Obsolete零件包装代码:TSOP
包装说明:12 X 20 MM, PLASTIC, TSOP-48针数:48
Reach Compliance Code:unknownECCN代码:3A991.B.1.A
HTS代码:8542.32.00.51风险等级:5.44
Is Samacsys:N最长访问时间:90 ns
其他特性:TOP BOOT BLOCK备用内存宽度:8
启动块:TOP命令用户界面:YES
通用闪存接口:YES数据轮询:YES
JESD-30 代码:R-PDSO-G48长度:18.4 mm
内存密度:33554432 bit内存集成电路类型:FLASH
内存宽度:16湿度敏感等级:1
功能数量:1部门数/规模:8,63
端子数量:48字数:2097152 words
字数代码:2000000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:2MX16封装主体材料:PLASTIC/EPOXY
封装代码:TSOP1封装等效代码:TSSOP48,.8,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):225
电源:3/3.3 V编程电压:3 V
认证状态:Not Qualified就绪/忙碌:YES
座面最大高度:1.2 mm部门规模:8K,64K
最大待机电流:0.0001 A子类别:Flash Memories
最大压摆率:0.02 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED切换位:YES
类型:NOR TYPE宽度:12 mm
Base Number Matches:1

M29DW324DT90N6 数据手册

 浏览型号M29DW324DT90N6的Datasheet PDF文件第2页浏览型号M29DW324DT90N6的Datasheet PDF文件第3页浏览型号M29DW324DT90N6的Datasheet PDF文件第4页浏览型号M29DW324DT90N6的Datasheet PDF文件第5页浏览型号M29DW324DT90N6的Datasheet PDF文件第6页浏览型号M29DW324DT90N6的Datasheet PDF文件第7页 
M29DW324DT  
M29DW324DB  
32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block)  
3V Supply Flash Memory  
FEATURES SUMMARY  
SUPPLY VOLTAGE  
Figure 1. Packages  
VCC = 2.7V to 3.6V for Program, Erase  
and Read  
VPP =12V for Fast Program (optional)  
ACCESS TIME: 70, 90ns  
PROGRAMMING TIME  
10µs per Byte/Word typical  
Double Word/ Quadruple Byte Program  
TSOP48 (N)  
12 x 20mm  
MEMORY BLOCKS  
Dual Bank Memory Array: 16Mbit+16Mbit  
Parameter Blocks (Top or Bottom  
Location)  
FBGA  
DUAL OPERATIONS  
Read in one bank while Program or Erase  
in other  
TFBGA48 (ZE)  
6 x 8mm  
ERASE SUSPEND and RESUME MODES  
Read and Program another Block during  
Erase Suspend  
UNLOCK BYPASS PROGRAM COMMAND  
Faster Production/Batch Programming  
VPP/WP PIN for FAST PROGRAM and  
WRITE PROTECT  
TEMPORARY BLOCK UNPROTECTION  
MODE  
COMMON FLASH INTERFACE  
64 bit Security Code  
EXTENDED MEMORY BLOCK  
Extra block used as security block or to  
store additional information  
LOW POWER CONSUMPTION  
Standby and Automatic Standby  
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
ELECTRONIC SIGNATURE  
Manufacturer Code: 0020h  
Top Device Code M29DW324DT: 225Ch  
Bottom Device Code M29DW324DB:  
225Dh  
March 2008  
1/50  

与M29DW324DT90N6相关器件

型号 品牌 获取价格 描述 数据表
M29DW324DT90N6E NUMONYX

获取价格

32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block) 3V Supply Flash Memory
M29DW324DT90N6E STMICROELECTRONICS

获取价格

32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory
M29DW324DT90N6F STMICROELECTRONICS

获取价格

32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory
M29DW324DT90N6F NUMONYX

获取价格

32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block) 3V Supply Flash Memory
M29DW324DT90N6T NUMONYX

获取价格

32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block) 3V Supply Flash Memory
M29DW324DT90N6T STMICROELECTRONICS

获取价格

32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory
M29DW324DT90ZA1 STMICROELECTRONICS

获取价格

32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory
M29DW324DT90ZA1E STMICROELECTRONICS

获取价格

32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory
M29DW324DT90ZA1F STMICROELECTRONICS

获取价格

32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory
M29DW324DT90ZA1T STMICROELECTRONICS

获取价格

32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory