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M29DW324DB70N6T PDF预览

M29DW324DB70N6T

更新时间: 2024-11-06 05:01:03
品牌 Logo 应用领域
恒忆 - NUMONYX 闪存
页数 文件大小 规格书
50页 1295K
描述
32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block) 3V Supply Flash Memory

M29DW324DB70N6T 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:TSOP
包装说明:TSOP1, TSSOP48,.8,20针数:48
Reach Compliance Code:unknownECCN代码:3A991.B.1.A
HTS代码:8542.32.00.51风险等级:5.46
最长访问时间:70 ns其他特性:BOTTOM BOOT BLOCK
备用内存宽度:8启动块:BOTTOM
命令用户界面:YES通用闪存接口:YES
数据轮询:YESJESD-30 代码:R-PDSO-G48
长度:18.4 mm内存密度:33554432 bit
内存集成电路类型:FLASH内存宽度:16
湿度敏感等级:1功能数量:1
部门数/规模:8,63端子数量:48
字数:2097152 words字数代码:2000000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:2MX16
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装等效代码:TSSOP48,.8,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):225电源:3/3.3 V
编程电压:3 V认证状态:Not Qualified
就绪/忙碌:YES座面最大高度:1.2 mm
部门规模:8K,64K最大待机电流:0.0001 A
子类别:Flash Memories最大压摆率:0.02 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
切换位:YES类型:NOR TYPE
宽度:12 mmBase Number Matches:1

M29DW324DB70N6T 数据手册

 浏览型号M29DW324DB70N6T的Datasheet PDF文件第2页浏览型号M29DW324DB70N6T的Datasheet PDF文件第3页浏览型号M29DW324DB70N6T的Datasheet PDF文件第4页浏览型号M29DW324DB70N6T的Datasheet PDF文件第5页浏览型号M29DW324DB70N6T的Datasheet PDF文件第6页浏览型号M29DW324DB70N6T的Datasheet PDF文件第7页 
M29DW324DT  
M29DW324DB  
32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block)  
3V Supply Flash Memory  
FEATURES SUMMARY  
SUPPLY VOLTAGE  
Figure 1. Packages  
VCC = 2.7V to 3.6V for Program, Erase  
and Read  
VPP =12V for Fast Program (optional)  
ACCESS TIME: 70, 90ns  
PROGRAMMING TIME  
10µs per Byte/Word typical  
Double Word/ Quadruple Byte Program  
TSOP48 (N)  
12 x 20mm  
MEMORY BLOCKS  
Dual Bank Memory Array: 16Mbit+16Mbit  
Parameter Blocks (Top or Bottom  
Location)  
FBGA  
DUAL OPERATIONS  
Read in one bank while Program or Erase  
in other  
TFBGA48 (ZE)  
6 x 8mm  
ERASE SUSPEND and RESUME MODES  
Read and Program another Block during  
Erase Suspend  
UNLOCK BYPASS PROGRAM COMMAND  
Faster Production/Batch Programming  
VPP/WP PIN for FAST PROGRAM and  
WRITE PROTECT  
TEMPORARY BLOCK UNPROTECTION  
MODE  
COMMON FLASH INTERFACE  
64 bit Security Code  
EXTENDED MEMORY BLOCK  
Extra block used as security block or to  
store additional information  
LOW POWER CONSUMPTION  
Standby and Automatic Standby  
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
ELECTRONIC SIGNATURE  
Manufacturer Code: 0020h  
Top Device Code M29DW324DT: 225Ch  
Bottom Device Code M29DW324DB:  
225Dh  
March 2008  
1/50  

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