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M29DW324DB70N6E PDF预览

M29DW324DB70N6E

更新时间: 2024-11-08 22:36:11
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存存储内存集成电路光电二极管
页数 文件大小 规格书
49页 764K
描述
32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory

M29DW324DB70N6E 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:TSOP包装说明:TSOP1, TSSOP48,.8,20
针数:48Reach Compliance Code:compliant
ECCN代码:3A991.B.1.AHTS代码:8542.32.00.51
风险等级:5.12最长访问时间:70 ns
其他特性:BOTTOM BOOT BLOCK备用内存宽度:8
启动块:BOTTOM命令用户界面:YES
通用闪存接口:YES数据轮询:YES
JESD-30 代码:R-PDSO-G48JESD-609代码:e3/e6
长度:18.4 mm内存密度:33554432 bit
内存集成电路类型:FLASH内存宽度:16
功能数量:1部门数/规模:8,63
端子数量:48字数:2097152 words
字数代码:2000000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:2MX16封装主体材料:PLASTIC/EPOXY
封装代码:TSOP1封装等效代码:TSSOP48,.8,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):260
电源:3/3.3 V编程电压:3 V
认证状态:Not Qualified就绪/忙碌:YES
座面最大高度:1.2 mm部门规模:8K,64K
最大待机电流:0.0001 A子类别:Flash Memories
最大压摆率:0.02 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:TIN/TIN BISMUTH
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
切换位:YES类型:NOR TYPE
宽度:12 mmBase Number Matches:1

M29DW324DB70N6E 数据手册

 浏览型号M29DW324DB70N6E的Datasheet PDF文件第2页浏览型号M29DW324DB70N6E的Datasheet PDF文件第3页浏览型号M29DW324DB70N6E的Datasheet PDF文件第4页浏览型号M29DW324DB70N6E的Datasheet PDF文件第5页浏览型号M29DW324DB70N6E的Datasheet PDF文件第6页浏览型号M29DW324DB70N6E的Datasheet PDF文件第7页 
M29DW324DT  
M29DW324DB  
32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block)  
3V Supply Flash Memory  
FEATURES SUMMARY  
SUPPLY VOLTAGE  
Figure 1. Packages  
– V = 2.7V to 3.6V for Program, Erase and  
CC  
Read  
– V =12V for Fast Program (optional)  
PP  
ACCESS TIME: 70, 90ns  
PROGRAMMING TIME  
– 10µs per Byte/Word typical  
TSOP48 (N)  
12 x 20mm  
– Double Word/ Quadruple Byte Program  
MEMORY BLOCKS  
– Dual Bank Memory Array: 16Mbit+16Mbit  
– Parameter Blocks (Top or Bottom Location)  
DUAL OPERATIONS  
FBGA  
– Read in one bank while Program or Erase in  
other  
TFBGA63 (ZA)  
7 x 11mm  
ERASE SUSPEND and RESUME MODES  
– Read and Program another Block during  
Erase Suspend  
UNLOCK BYPASS PROGRAM COMMAND  
– Faster Production/Batch Programming  
FBGA  
V /WP PIN for FAST PROGRAM and WRITE  
PP  
PROTECT  
TFBGA48 (ZE)  
6 x 8mm  
TEMPORARY BLOCK UNPROTECTION  
MODE  
COMMON FLASH INTERFACE  
– 64 bit Security Code  
EXTENDED MEMORY BLOCK  
– Extra block used as security block or to store  
additional information  
LOW POWER CONSUMPTION  
– Standby and Automatic Standby  
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 0020h  
– Top Device Code M29DW324DT: 225Ch  
– Bottom Device Code M29DW324DB: 225Dh  
June 2003  
1/49  

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