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M29DW324DB70N1T

更新时间： 2024-11-09 05:01:03

品牌	Logo	应用领域
恒忆 - NUMONYX		闪存
页数	文件大小	规格书
50页	1295K
描述
32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block) 3V Supply Flash Memory

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数据手册

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M29DW324DB70N1T 数据手册

M29DW324DT

M29DW324DB

32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block)

3V Supply Flash Memory

FEATURES SUMMARY

■

SUPPLY VOLTAGE

Figure 1. Packages

–

V_CC= 2.7V to 3.6V for Program, Erase

and Read

–

V_PP=12V for Fast Program (optional)

■

ACCESS TIME: 70, 90ns

PROGRAMMING TIME

–

10µs per Byte/Word typical

Double Word/ Quadruple Byte Program

TSOP48 (N)

12 x 20mm

■

MEMORY BLOCKS

–

Dual Bank Memory Array: 16Mbit+16Mbit

Parameter Blocks (Top or Bottom

Location)

FBGA

■

DUAL OPERATIONS

–

Read in one bank while Program or Erase

in other

TFBGA48 (ZE)

6 x 8mm

ERASE SUSPEND and RESUME MODES

–

Read and Program another Block during

Erase Suspend

UNLOCK BYPASS PROGRAM COMMAND

Faster Production/Batch Programming

–

■

V_PP/WP PIN for FAST PROGRAM and

WRITE PROTECT

TEMPORARY BLOCK UNPROTECTION

MODE

COMMON FLASH INTERFACE

–

64 bit Security Code

■

EXTENDED MEMORY BLOCK

–

Extra block used as security block or to

store additional information

LOW POWER CONSUMPTION

Standby and Automatic Standby

–

■

100,000 PROGRAM/ERASE CYCLES per

BLOCK

ELECTRONIC SIGNATURE

–

Manufacturer Code: 0020h

Top Device Code M29DW324DT: 225Ch

Bottom Device Code M29DW324DB:

225Dh

March 2008

1/50

12 3 4 5 6 7...50

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