5秒后页面跳转
M29DW323DT70ZE1 PDF预览

M29DW323DT70ZE1

更新时间: 2024-11-06 05:01:03
品牌 Logo 应用领域
恒忆 - NUMONYX 闪存存储内存集成电路
页数 文件大小 规格书
51页 1304K
描述
32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block) 3V Supply Flash Memory

M29DW323DT70ZE1 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:BGA包装说明:TFBGA,
针数:48Reach Compliance Code:not_compliant
ECCN代码:3A991.B.1.AHTS代码:8542.32.00.51
风险等级:5.16Is Samacsys:N
最长访问时间:70 ns其他特性:TOP BOOT BLOCK
备用内存宽度:8启动块:TOP
JESD-30 代码:R-PBGA-B48JESD-609代码:e0
长度:8 mm内存密度:33554432 bit
内存集成电路类型:FLASH内存宽度:16
功能数量:1端子数量:48
字数:2097152 words字数代码:2000000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:2MX16
封装主体材料:PLASTIC/EPOXY封装代码:TFBGA
封装形状:RECTANGULAR封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH
并行/串行:PARALLEL峰值回流温度(摄氏度):240
编程电压:3 V认证状态:Not Qualified
座面最大高度:1.2 mm最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn63Pb37)
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:30
类型:NOR TYPE宽度:6 mm
Base Number Matches:1

M29DW323DT70ZE1 数据手册

 浏览型号M29DW323DT70ZE1的Datasheet PDF文件第2页浏览型号M29DW323DT70ZE1的Datasheet PDF文件第3页浏览型号M29DW323DT70ZE1的Datasheet PDF文件第4页浏览型号M29DW323DT70ZE1的Datasheet PDF文件第5页浏览型号M29DW323DT70ZE1的Datasheet PDF文件第6页浏览型号M29DW323DT70ZE1的Datasheet PDF文件第7页 
M29DW323DT  
M29DW323DB  
32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block)  
3V Supply Flash Memory  
FEATURES SUMMARY  
SUPPLY VOLTAGE  
Figure 1. Packages  
VCC = 2.7V to 3.6V for Program, Erase  
and Read  
VPP =12V for Fast Program (optional)  
ACCESS TIME: 70ns  
PROGRAMMING TIME  
10µs per Byte/Word typical  
Double Word/ Quadruple Byte Program  
TSOP48 (N)  
12 x 20mm  
MEMORY BLOCKS  
Dual Bank Memory Array: 8Mbit+24Mbit  
Parameter Blocks (Top or Bottom  
Location)  
FBGA  
DUAL OPERATIONS  
Read in one bank while Program or Erase  
in other  
TFBGA48 (ZE)  
6 x 8mm  
ERASE SUSPEND and RESUME MODES  
Read and Program another Block during  
Erase Suspend  
UNLOCK BYPASS PROGRAM COMMAND  
Faster Production/Batch Programming  
VPP/WP PIN for FAST PROGRAM and  
WRITE PROTECT  
TEMPORARY BLOCK UNPROTECTION  
MODE  
COMMON FLASH INTERFACE  
64 bit Security Code  
EXTENDED MEMORY BLOCK  
Extra block used as security block or to  
store additional information  
LOW POWER CONSUMPTION  
Standby and Automatic Standby  
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
ELECTRONIC SIGNATURE  
Manufacturer Code: 0020h  
Top Device Code M29DW323DT: 225Eh  
Bottom Device Code M29DW323DB:  
225Fh  
March 2008  
1/51  

与M29DW323DT70ZE1相关器件

型号 品牌 获取价格 描述 数据表
M29DW323DT70ZE1E NUMONYX

获取价格

32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block) 3V Supply Flash Memory
M29DW323DT70ZE1E STMICROELECTRONICS

获取价格

32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory
M29DW323DT70ZE1F STMICROELECTRONICS

获取价格

32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory
M29DW323DT70ZE1F NUMONYX

获取价格

32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block) 3V Supply Flash Memory
M29DW323DT70ZE1T STMICROELECTRONICS

获取价格

32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory
M29DW323DT70ZE1T NUMONYX

获取价格

32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block) 3V Supply Flash Memory
M29DW323DT70ZE6 STMICROELECTRONICS

获取价格

32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory
M29DW323DT70ZE6 NUMONYX

获取价格

32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block) 3V Supply Flash Memory
M29DW323DT70ZE6E NUMONYX

获取价格

32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block) 3V Supply Flash Memory
M29DW323DT70ZE6E STMICROELECTRONICS

获取价格

32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory