Datasheet > M29DW323DT

M29DW323DT

更新时间： 2024-11-18 22:57:39

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
49页	766K
描述
32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory

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M29DW323DT 数据手册

M29DW323DT

M29DW323DB

32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block)

3V Supply Flash Memory

FEATURES SUMMARY

■ SUPPLY VOLTAGE

Figure 1. Packages

– V = 2.7V to 3.6V for Program, Erase and

Read

– V =12V for Fast Program (optional)

■ ACCESS TIME: 70, 90ns

■ PROGRAMMING TIME

– 10µs per Byte/Word typical

TSOP48 (N)

12 x 20mm

– Double Word/ Quadruple Byte Program

■ MEMORY BLOCKS

– Dual Bank Memory Array: 8Mbit+24Mbit

– Parameter Blocks (Top or Bottom Location)

■ DUAL OPERATIONS

FBGA

– Read in one bank while Program or Erase in

other

TFBGA63 (ZA)

7 x 11mm

■ ERASE SUSPEND and RESUME MODES

– Read and Program another Block during

Erase Suspend

■ UNLOCK BYPASS PROGRAM COMMAND

– Faster Production/Batch Programming

FBGA

■ V /WP PIN for FAST PROGRAM and WRITE

PROTECT

■ TEMPORARY BLOCK UNPROTECTION

TFBGA48 (ZE)

6 x 8mm

MODE

■ COMMON FLASH INTERFACE

– 64 bit Security Code

■ EXTENDED MEMORY BLOCK

– Extra block used as security block or to store

additional information

■ LOW POWER CONSUMPTION

– Standby and Automatic Standby

■ 100,000 PROGRAM/ERASE CYCLES per

BLOCK

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 0020h

– Top Device Code M29DW323DT: 225Eh

– Bottom Device Code M29DW323DB: 225Fh

June 2003

1/49

12 3 4 5 6 7...49

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