5秒后页面跳转
M29DW323DB90ZE1T PDF预览

M29DW323DB90ZE1T

更新时间: 2024-11-18 22:57:39
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 内存集成电路
页数 文件大小 规格书
49页 766K
描述
32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory

M29DW323DB90ZE1T 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:BGA包装说明:6 X 8 MM, 0.80 MM PITCH, TFBGA-48
针数:48Reach Compliance Code:unknown
ECCN代码:3A991.B.1.AHTS代码:8542.32.00.51
风险等级:5.15最长访问时间:90 ns
其他特性:BOTTOM BOOT BLOCK备用内存宽度:8
启动块:BOTTOM命令用户界面:YES
通用闪存接口:YES数据轮询:YES
JESD-30 代码:R-PBGA-B48JESD-609代码:e1
长度:8 mm内存密度:33554432 bit
内存集成电路类型:FLASH内存宽度:16
功能数量:1部门数/规模:8,63
端子数量:48字数:2097152 words
字数代码:2000000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:2MX16封装主体材料:PLASTIC/EPOXY
封装代码:TFBGA封装等效代码:BGA48,6X8,32
封装形状:RECTANGULAR封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH
并行/串行:PARALLEL峰值回流温度(摄氏度):260
电源:3/3.3 V编程电压:3 V
认证状态:Not Qualified就绪/忙碌:YES
座面最大高度:1.2 mm部门规模:8K,64K
最大待机电流:0.0001 A子类别:Flash Memories
最大压摆率:0.03 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
切换位:YES类型:NOR TYPE
宽度:6 mmBase Number Matches:1

M29DW323DB90ZE1T 数据手册

 浏览型号M29DW323DB90ZE1T的Datasheet PDF文件第2页浏览型号M29DW323DB90ZE1T的Datasheet PDF文件第3页浏览型号M29DW323DB90ZE1T的Datasheet PDF文件第4页浏览型号M29DW323DB90ZE1T的Datasheet PDF文件第5页浏览型号M29DW323DB90ZE1T的Datasheet PDF文件第6页浏览型号M29DW323DB90ZE1T的Datasheet PDF文件第7页 
M29DW323DT  
M29DW323DB  
32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block)  
3V Supply Flash Memory  
FEATURES SUMMARY  
SUPPLY VOLTAGE  
Figure 1. Packages  
– V = 2.7V to 3.6V for Program, Erase and  
CC  
Read  
– V =12V for Fast Program (optional)  
PP  
ACCESS TIME: 70, 90ns  
PROGRAMMING TIME  
– 10µs per Byte/Word typical  
TSOP48 (N)  
12 x 20mm  
– Double Word/ Quadruple Byte Program  
MEMORY BLOCKS  
– Dual Bank Memory Array: 8Mbit+24Mbit  
– Parameter Blocks (Top or Bottom Location)  
DUAL OPERATIONS  
FBGA  
– Read in one bank while Program or Erase in  
other  
TFBGA63 (ZA)  
7 x 11mm  
ERASE SUSPEND and RESUME MODES  
– Read and Program another Block during  
Erase Suspend  
UNLOCK BYPASS PROGRAM COMMAND  
– Faster Production/Batch Programming  
FBGA  
V /WP PIN for FAST PROGRAM and WRITE  
PP  
PROTECT  
TEMPORARY BLOCK UNPROTECTION  
TFBGA48 (ZE)  
6 x 8mm  
MODE  
COMMON FLASH INTERFACE  
– 64 bit Security Code  
EXTENDED MEMORY BLOCK  
– Extra block used as security block or to store  
additional information  
LOW POWER CONSUMPTION  
– Standby and Automatic Standby  
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 0020h  
– Top Device Code M29DW323DT: 225Eh  
– Bottom Device Code M29DW323DB: 225Fh  
June 2003  
1/49  

与M29DW323DB90ZE1T相关器件

型号 品牌 获取价格 描述 数据表
M29DW323DB90ZE6 STMICROELECTRONICS

获取价格

32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory
M29DW323DB90ZE6E STMICROELECTRONICS

获取价格

32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory
M29DW323DB90ZE6F STMICROELECTRONICS

获取价格

32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory
M29DW323DB90ZE6T STMICROELECTRONICS

获取价格

32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory
M29DW323DT NUMONYX

获取价格

32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block) 3V Supply Flash Memory
M29DW323DT STMICROELECTRONICS

获取价格

32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory
M29DW323DT70N1 NUMONYX

获取价格

32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block) 3V Supply Flash Memory
M29DW323DT70N1 STMICROELECTRONICS

获取价格

32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory
M29DW323DT70N1E STMICROELECTRONICS

获取价格

32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory
M29DW323DT70N1E NUMONYX

获取价格

32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block) 3V Supply Flash Memory