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M29DW323DB70ZE6F PDF预览

M29DW323DB70ZE6F

更新时间: 2024-09-14 15:17:59
品牌 Logo 应用领域
镁光 - MICRON /
页数 文件大小 规格书
52页 1120K
描述
32Mb (4Mb x8 or 2Mb x16), 3V, Dual Bank 8:24, Boot Block, Parallel NOR Flash Memory

M29DW323DB70ZE6F 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:BGA
包装说明:TFBGA-48针数:48
Reach Compliance Code:compliantECCN代码:3A991.B.1.A
HTS代码:8542.32.00.51风险等级:5.49
Is Samacsys:N最长访问时间:70 ns
其他特性:BOTTOM BOOT BLOCK备用内存宽度:8
启动块:BOTTOM命令用户界面:YES
通用闪存接口:YES数据轮询:YES
JESD-30 代码:R-PBGA-B48JESD-609代码:e1
长度:8 mm内存密度:33554432 bit
内存集成电路类型:FLASH内存宽度:16
功能数量:1部门数/规模:8,63
端子数量:48字数:2097152 words
字数代码:2000000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:2MX16封装主体材料:PLASTIC/EPOXY
封装代码:TFBGA封装等效代码:BGA48,6X8,32
封装形状:RECTANGULAR封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH
并行/串行:PARALLEL峰值回流温度(摄氏度):260
电源:3/3.3 V编程电压:3 V
认证状态:Not Qualified就绪/忙碌:YES
座面最大高度:1.2 mm部门规模:8K,64K
最大待机电流:0.0001 A子类别:Flash Memories
最大压摆率:0.02 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:TIN SILVER COPPER
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:30
切换位:YES类型:NOR TYPE
宽度:6 mmBase Number Matches:1

M29DW323DB70ZE6F 数据手册

 浏览型号M29DW323DB70ZE6F的Datasheet PDF文件第2页浏览型号M29DW323DB70ZE6F的Datasheet PDF文件第3页浏览型号M29DW323DB70ZE6F的Datasheet PDF文件第4页浏览型号M29DW323DB70ZE6F的Datasheet PDF文件第5页浏览型号M29DW323DB70ZE6F的Datasheet PDF文件第6页浏览型号M29DW323DB70ZE6F的Datasheet PDF文件第7页 
M29DW323DT  
M29DW323DB  
32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block)  
3V Supply Flash Memory  
FEATURES SUMMARY  
„
SUPPLY VOLTAGE  
Figure 1. APackages  
V
= 2.7V to 3.6V for Program, Erase  
CC  
and Read  
V
=12V for Fast Program (optional)  
PP  
„
„
ACCESS TIME: 70ns  
PROGRAMMING TIME  
10µs per Byte/Word typical  
Double Word/ Quadruple Byte Program  
TSOP48 (N)  
12 x 20mm  
„
MEMORY BLOCKS  
Dual Bank Memory Array: 8Mbit+24Mbit  
Parameter Blocks (Top or Bottom  
Location)  
FBGA  
„
„
„
DUAL OPERATIONS  
Read in one bank while Program or Erase  
in other  
TFBGA48 (ZE)  
6 x 8mm  
ERASE SUSPEND and RESUME MODES  
Read and Program another Block during  
Erase Suspend  
UNLOCK BYPASS PROGRAM COMMAND  
V
Faster Production/Batch Programming  
/WP PIN for FAST PROGRAM and  
„
„
„
PP  
WRITE PROTECT  
TEMPORARY BLOCK UNPROTECTION  
MODE  
COMMON FLASH INTERFACE  
64 bit Security Code  
„
„
EXTENDED MEMORY BLOCK  
Extra block used as security block or to  
store additional information  
LOW POWER CONSUMPTION  
Standby and Automatic Standby  
„
„
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
ELECTRONIC SIGNATURE  
Manufacturer Code: 0020h  
Top Device Code M29DW323DT: 225Eh  
Bottom Device Code M29DW323DB:  
225Fh  
„
Automotive Certified Parts Available  
January 2018  
1/51  

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