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M29DW323DB70N6E PDF预览

M29DW323DB70N6E

更新时间: 2024-03-03 10:08:29
品牌 Logo 应用领域
镁光 - MICRON /
页数 文件大小 规格书
52页 1120K
描述
32Mb (4Mb x8 or 2Mb x16), 3V, Dual Bank 8:24, Boot Block, Parallel NOR Flash Memory

M29DW323DB70N6E 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TSOP
包装说明:TSOP1, TSSOP48,.8,20针数:48
Reach Compliance Code:compliantECCN代码:3A991.B.1.A
HTS代码:8542.32.00.51风险等级:7.58
最长访问时间:70 ns其他特性:BOTTOM BOOT BLOCK
备用内存宽度:8启动块:BOTTOM
命令用户界面:YES通用闪存接口:YES
数据轮询:YESJESD-30 代码:R-PDSO-G48
JESD-609代码:e3长度:18.4 mm
内存密度:33554432 bit内存集成电路类型:FLASH
内存宽度:16功能数量:1
部门数/规模:8,63端子数量:48
字数:2097152 words字数代码:2000000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:2MX16
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装等效代码:TSSOP48,.8,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:3/3.3 V
编程电压:3 V认证状态:Not Qualified
就绪/忙碌:YES座面最大高度:1.2 mm
部门规模:8K,64K最大待机电流:0.0001 A
子类别:Flash Memories最大压摆率:0.02 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED切换位:YES
类型:NOR TYPE宽度:12 mm
Base Number Matches:1

M29DW323DB70N6E 数据手册

 浏览型号M29DW323DB70N6E的Datasheet PDF文件第2页浏览型号M29DW323DB70N6E的Datasheet PDF文件第3页浏览型号M29DW323DB70N6E的Datasheet PDF文件第4页浏览型号M29DW323DB70N6E的Datasheet PDF文件第5页浏览型号M29DW323DB70N6E的Datasheet PDF文件第6页浏览型号M29DW323DB70N6E的Datasheet PDF文件第7页 
M29DW323DT  
M29DW323DB  
32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block)  
3V Supply Flash Memory  
FEATURES SUMMARY  
„
SUPPLY VOLTAGE  
Figure 1. APackages  
V
= 2.7V to 3.6V for Program, Erase  
CC  
and Read  
V
=12V for Fast Program (optional)  
PP  
„
„
ACCESS TIME: 70ns  
PROGRAMMING TIME  
10µs per Byte/Word typical  
Double Word/ Quadruple Byte Program  
TSOP48 (N)  
12 x 20mm  
„
MEMORY BLOCKS  
Dual Bank Memory Array: 8Mbit+24Mbit  
Parameter Blocks (Top or Bottom  
Location)  
FBGA  
„
„
„
DUAL OPERATIONS  
Read in one bank while Program or Erase  
in other  
TFBGA48 (ZE)  
6 x 8mm  
ERASE SUSPEND and RESUME MODES  
Read and Program another Block during  
Erase Suspend  
UNLOCK BYPASS PROGRAM COMMAND  
V
Faster Production/Batch Programming  
/WP PIN for FAST PROGRAM and  
„
„
„
PP  
WRITE PROTECT  
TEMPORARY BLOCK UNPROTECTION  
MODE  
COMMON FLASH INTERFACE  
64 bit Security Code  
„
„
EXTENDED MEMORY BLOCK  
Extra block used as security block or to  
store additional information  
LOW POWER CONSUMPTION  
Standby and Automatic Standby  
„
„
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
ELECTRONIC SIGNATURE  
Manufacturer Code: 0020h  
Top Device Code M29DW323DT: 225Eh  
Bottom Device Code M29DW323DB:  
225Fh  
„
Automotive Certified Parts Available  
January 2018  
1/51  

M29DW323DB70N6E 替代型号

型号 品牌 替代类型 描述 数据表
M29W320EB70N6E MICRON

完全替代

Rev. 9
M29DW323DB70N6F MICRON

完全替代

32Mb (4Mb x8 or 2Mb x16), 3V, Dual Bank 8:24, Boot Block, Parallel NOR Flash Memory
M29W320DB70N6E MICRON

完全替代

Rev. 13

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