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M29DW323DB70N1F PDF预览

M29DW323DB70N1F

更新时间: 2024-10-25 22:36:07
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存存储内存集成电路光电二极管
页数 文件大小 规格书
49页 766K
描述
32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory

M29DW323DB70N1F 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:TSOP包装说明:TSOP1, TSSOP48,.8,20
针数:48Reach Compliance Code:compliant
ECCN代码:3A991.B.1.AHTS代码:8542.32.00.51
风险等级:5.14Is Samacsys:N
最长访问时间:70 ns其他特性:BOTTOM BOOT BLOCK
备用内存宽度:8启动块:BOTTOM
命令用户界面:YES通用闪存接口:YES
数据轮询:YESJESD-30 代码:R-PDSO-G48
JESD-609代码:e3/e6长度:18.4 mm
内存密度:33554432 bit内存集成电路类型:FLASH
内存宽度:16功能数量:1
部门数/规模:8,63端子数量:48
字数:2097152 words字数代码:2000000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:2MX16
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装等效代码:TSSOP48,.8,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):260电源:3/3.3 V
编程电压:3 V认证状态:Not Qualified
就绪/忙碌:YES座面最大高度:1.2 mm
部门规模:8K,64K最大待机电流:0.0001 A
子类别:Flash Memories最大压摆率:0.02 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:TIN/TIN BISMUTH端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:30切换位:YES
类型:NOR TYPE宽度:12 mm
Base Number Matches:1

M29DW323DB70N1F 数据手册

 浏览型号M29DW323DB70N1F的Datasheet PDF文件第2页浏览型号M29DW323DB70N1F的Datasheet PDF文件第3页浏览型号M29DW323DB70N1F的Datasheet PDF文件第4页浏览型号M29DW323DB70N1F的Datasheet PDF文件第5页浏览型号M29DW323DB70N1F的Datasheet PDF文件第6页浏览型号M29DW323DB70N1F的Datasheet PDF文件第7页 
M29DW323DT  
M29DW323DB  
32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block)  
3V Supply Flash Memory  
FEATURES SUMMARY  
SUPPLY VOLTAGE  
Figure 1. Packages  
– V = 2.7V to 3.6V for Program, Erase and  
CC  
Read  
– V =12V for Fast Program (optional)  
PP  
ACCESS TIME: 70, 90ns  
PROGRAMMING TIME  
– 10µs per Byte/Word typical  
TSOP48 (N)  
12 x 20mm  
– Double Word/ Quadruple Byte Program  
MEMORY BLOCKS  
– Dual Bank Memory Array: 8Mbit+24Mbit  
– Parameter Blocks (Top or Bottom Location)  
DUAL OPERATIONS  
FBGA  
– Read in one bank while Program or Erase in  
other  
TFBGA63 (ZA)  
7 x 11mm  
ERASE SUSPEND and RESUME MODES  
– Read and Program another Block during  
Erase Suspend  
UNLOCK BYPASS PROGRAM COMMAND  
– Faster Production/Batch Programming  
FBGA  
V /WP PIN for FAST PROGRAM and WRITE  
PP  
PROTECT  
TEMPORARY BLOCK UNPROTECTION  
TFBGA48 (ZE)  
6 x 8mm  
MODE  
COMMON FLASH INTERFACE  
– 64 bit Security Code  
EXTENDED MEMORY BLOCK  
– Extra block used as security block or to store  
additional information  
LOW POWER CONSUMPTION  
– Standby and Automatic Standby  
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 0020h  
– Top Device Code M29DW323DT: 225Eh  
– Bottom Device Code M29DW323DB: 225Fh  
June 2003  
1/49  

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