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M29DW128F70ZA1F PDF预览

M29DW128F70ZA1F

更新时间: 2024-10-26 05:01:03
品牌 Logo 应用领域
恒忆 - NUMONYX 闪存内存集成电路
页数 文件大小 规格书
94页 1791K
描述
128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory

M29DW128F70ZA1F 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:BGA
包装说明:TBGA, BGA64,8X8,40针数:64
Reach Compliance Code:unknownECCN代码:3A991.B.1.A
HTS代码:8542.32.00.51风险等级:5.37
最长访问时间:70 ns备用内存宽度:8
启动块:BOTTOM/TOP命令用户界面:YES
通用闪存接口:YES数据轮询:YES
JESD-30 代码:R-PBGA-B64长度:13 mm
内存密度:134217728 bit内存集成电路类型:FLASH
内存宽度:16功能数量:1
部门数/规模:16,254端子数量:64
字数:8388608 words字数代码:8000000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:8MX16
封装主体材料:PLASTIC/EPOXY封装代码:TBGA
封装等效代码:BGA64,8X8,40封装形状:RECTANGULAR
封装形式:GRID ARRAY, THIN PROFILE页面大小:8/16 words
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:3/3.3 V编程电压:3 V
认证状态:Not Qualified就绪/忙碌:YES
座面最大高度:1.2 mm部门规模:8K,64K
最大待机电流:0.0001 A子类别:Flash Memories
最大压摆率:0.02 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子形式:BALL
端子节距:1 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED切换位:YES
类型:NOR TYPE宽度:10 mm
Base Number Matches:1

M29DW128F70ZA1F 数据手册

 浏览型号M29DW128F70ZA1F的Datasheet PDF文件第2页浏览型号M29DW128F70ZA1F的Datasheet PDF文件第3页浏览型号M29DW128F70ZA1F的Datasheet PDF文件第4页浏览型号M29DW128F70ZA1F的Datasheet PDF文件第5页浏览型号M29DW128F70ZA1F的Datasheet PDF文件第6页浏览型号M29DW128F70ZA1F的Datasheet PDF文件第7页 
M29DW128F  
128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block)  
3V supply Flash memory  
Feature summary  
Supply voltage  
– VCC = 2.7V to 3.6V for Program, Erase and  
Read  
– VPP =12V for Fast Program (optional)  
Asynchronous Random/Page Read  
TSOP56 (NF)  
14 x 20mm  
– Page width: 8 Words  
– Page access: 25, 30ns  
– Random access: 60, 70ns  
BGA  
Programming time  
– 10µs per Byte/Word typical  
– 4 Words / 8 Bytes Program  
TBGA64 (ZA)  
– 32-Word Write Buffer  
10 x 13mm  
Erase Verify  
Low power consumption  
Memory blocks  
– Standby and Automatic Standby  
– Quadruple Bank Memory Array:  
16Mbit+48Mbit+48Mbit+16Mbit  
Hardware Block Protection  
– Parameter Blocks (at Top and Bottom)  
– VPP/WP Pin for fast program and write  
protect of the four outermost parameter  
blocks  
Dual Operation  
– While Program or Erase in one bank, Read  
in any of the other banks  
Security features  
– Standard Protection  
– Password Protection  
Program/Erase Suspend and Resume modes  
– Read from any Block during Program  
Suspend  
Extended Memory Block  
– Read and Program another Block during  
Erase Suspend  
– Extra block used as security block or to  
store additional information  
Unlock Bypass Program  
Electronic Signature  
– Faster Production/Batch Programming  
– Manufacturer Code: 0020h  
Common Flash Interface  
– Device Code: 227Eh + 2220h + 2200h  
ECOPACK® packages available  
– 64 bit Security Code  
100,000 Program/Erase cycles per block  
December 2007  
Rev 8  
1/94  
www.numonyx.com  
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