5秒后页面跳转
M28W640ECT70N1S PDF预览

M28W640ECT70N1S

更新时间: 2024-11-08 13:09:59
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存存储内存集成电路光电二极管
页数 文件大小 规格书
55页 786K
描述
4MX16 FLASH 3V PROM, 70ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48

M28W640ECT70N1S 技术参数

生命周期:Transferred零件包装代码:TSOP
包装说明:12 X 20 MM, PLASTIC, TSOP-48针数:48
Reach Compliance Code:unknownECCN代码:3A991.B.1.A
HTS代码:8542.32.00.51风险等级:5.15
Is Samacsys:N最长访问时间:70 ns
其他特性:TOP BOOT BLOCK启动块:TOP
JESD-30 代码:R-PDSO-G48长度:18.4 mm
内存密度:67108864 bit内存集成电路类型:FLASH
内存宽度:16功能数量:1
端子数量:48字数:4194304 words
字数代码:4000000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:4MX16封装主体材料:PLASTIC/EPOXY
封装代码:TSOP1封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
编程电压:3 V认证状态:Not Qualified
座面最大高度:1.2 mm最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
类型:NOR TYPE宽度:12 mm
Base Number Matches:1

M28W640ECT70N1S 数据手册

 浏览型号M28W640ECT70N1S的Datasheet PDF文件第2页浏览型号M28W640ECT70N1S的Datasheet PDF文件第3页浏览型号M28W640ECT70N1S的Datasheet PDF文件第4页浏览型号M28W640ECT70N1S的Datasheet PDF文件第5页浏览型号M28W640ECT70N1S的Datasheet PDF文件第6页浏览型号M28W640ECT70N1S的Datasheet PDF文件第7页 
M28W640ECT  
M28W640ECB  
64 Mbit (4Mb x16, Boot Block)  
3V Supply Flash Memory  
PRELIMINARY DATA  
FEATURES SUMMARY  
SUPPLY VOLTAGE  
Figure 1. Packages  
– V = 2.7V to 3.6V Core Power Supply  
DD  
– V  
= 1.65V to 3.6V for Input/Output  
DDQ  
FBGA  
– V = 12V for fast Program (optional)  
PP  
ACCESS TIME: 70, 85, 90,100ns  
PROGRAMMING TIME:  
TFBGA48 (ZB)  
6.39 x 10.5mm  
– 10µs typical  
– Double Word Programming Option  
– Quadruple Word Programming Option  
COMMON FLASH INTERFACE  
MEMORY BLOCKS  
– Parameter Blocks (Top or Bottom location)  
– Main Blocks  
BLOCK LOCKING  
TSOP48 (N)  
12 x 20mm  
– All blocks locked at Power Up  
– Any combination of blocks can be locked  
– WP for Block Lock-Down  
SECURITY  
– 128 bit user Programmable OTP cells  
– 64 bit unique device identifier  
AUTOMATIC STAND-BY MODE  
PROGRAM and ERASE SUSPEND  
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 20h  
– Top Device Code, M28W640ECT: 8848h  
– Bottom Device Code, M28W640ECB: 8849h  
April 2003  
1/55  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.  

与M28W640ECT70N1S相关器件

型号 品牌 获取价格 描述 数据表
M28W640ECT70N1T STMICROELECTRONICS

获取价格

64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory
M28W640ECT70N6 STMICROELECTRONICS

获取价格

64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory
M28W640ECT70N6 NUMONYX

获取价格

Flash, 4MX16, 70ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48
M28W640ECT70N6E STMICROELECTRONICS

获取价格

64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory
M28W640ECT70N6F STMICROELECTRONICS

获取价格

64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory
M28W640ECT70N6F NUMONYX

获取价格

Flash, 4MX16, 70ns, PDSO48, 12 X 20 MM, LEAD FREE, PLASTIC, TSOP-48
M28W640ECT70N6S NUMONYX

获取价格

Flash, 4MX16, 70ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48
M28W640ECT70N6T STMICROELECTRONICS

获取价格

64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory
M28W640ECT70N6T NUMONYX

获取价格

Flash, 4MX16, 70ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48
M28W640ECT70ZB1 NUMONYX

获取价格

Flash, 4MX16, 70ns, PBGA48, 6.39 X 10.50 MM, 0.75 MM PITCH, TFBGA-48