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M28W640ECT10ZB6S PDF预览

M28W640ECT10ZB6S

更新时间: 2024-11-09 08:50:31
品牌 Logo 应用领域
恒忆 - NUMONYX /
页数 文件大小 规格书
54页 957K
描述
Flash, 4MX16, 100ns, PBGA48, 6.39 X 10.50 MM, 0.75 MM PITCH, TFBGA-48

M28W640ECT10ZB6S 数据手册

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M28W640ECT  
M28W640ECB  
64 Mbit (4Mb x16, Boot Block)  
3V Supply Flash Memory  
FEATURES SUMMARY  
SUPPLY VOLTAGE  
Figure 1. Packages  
V
V
V
= 2.7V to 3.6V Core Power Supply  
DD  
= 1.65V to 3.6V for Input/Output  
DDQ  
FBGA  
= 12V for fast Program (optional)  
PP  
ACCESS TIME: 70, 85, 90,100ns  
PROGRAMMING TIME:  
10µs typical  
TFBGA48 (ZB)  
6.39 x 10.5mm  
Double Word Programming Option  
Quadruple Word Programming Option  
COMMON FLASH INTERFACE  
MEMORY BLOCKS  
Parameter Blocks (Top or Bottom  
location)  
Main Blocks  
BLOCK LOCKING  
All blocks locked at Power Up  
Any combination of blocks can be locked  
WP for Block Lock-Down  
TSOP48 (N)  
12 x 20mm  
SECURITY  
128 bit user Programmable OTP cells  
64 bit unique device identifier  
AUTOMATIC STAND-BY MODE  
PROGRAM and ERASE SUSPEND  
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
ELECTRONIC SIGNATURE  
Manufacturer Code: 20h  
Top Device Code, M28W640ECT: 8848h  
Bottom Device Code, M28W640ECB:  
8849h  
February 2004  
1/54  

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