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M28W640ECB85N1T PDF预览

M28W640ECB85N1T

更新时间: 2024-11-08 19:39:59
品牌 Logo 应用领域
恒忆 - NUMONYX 光电二极管内存集成电路
页数 文件大小 规格书
54页 957K
描述
Flash, 4MX16, 85ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48

M28W640ECB85N1T 技术参数

生命周期:Obsolete零件包装代码:TSOP
包装说明:12 X 20 MM, PLASTIC, TSOP-48针数:48
Reach Compliance Code:unknownECCN代码:3A991.B.1.A
HTS代码:8542.32.00.51风险等级:5.29
Is Samacsys:N最长访问时间:85 ns
启动块:BOTTOMJESD-30 代码:R-PDSO-G48
长度:18.4 mm内存密度:67108864 bit
内存集成电路类型:FLASH内存宽度:16
功能数量:1端子数量:48
字数:4194304 words字数代码:4000000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:4MX16
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL编程电压:3 V
认证状态:Not Qualified座面最大高度:1.2 mm
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL类型:NOR TYPE
宽度:12 mmBase Number Matches:1

M28W640ECB85N1T 数据手册

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M28W640ECT  
M28W640ECB  
64 Mbit (4Mb x16, Boot Block)  
3V Supply Flash Memory  
FEATURES SUMMARY  
SUPPLY VOLTAGE  
Figure 1. Packages  
V
V
V
= 2.7V to 3.6V Core Power Supply  
DD  
= 1.65V to 3.6V for Input/Output  
DDQ  
FBGA  
= 12V for fast Program (optional)  
PP  
ACCESS TIME: 70, 85, 90,100ns  
PROGRAMMING TIME:  
10µs typical  
TFBGA48 (ZB)  
6.39 x 10.5mm  
Double Word Programming Option  
Quadruple Word Programming Option  
COMMON FLASH INTERFACE  
MEMORY BLOCKS  
Parameter Blocks (Top or Bottom  
location)  
Main Blocks  
BLOCK LOCKING  
All blocks locked at Power Up  
Any combination of blocks can be locked  
WP for Block Lock-Down  
TSOP48 (N)  
12 x 20mm  
SECURITY  
128 bit user Programmable OTP cells  
64 bit unique device identifier  
AUTOMATIC STAND-BY MODE  
PROGRAM and ERASE SUSPEND  
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
ELECTRONIC SIGNATURE  
Manufacturer Code: 20h  
Top Device Code, M28W640ECT: 8848h  
Bottom Device Code, M28W640ECB:  
8849h  
February 2004  
1/54  

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