5秒后页面跳转
M28W640CB90N1 PDF预览

M28W640CB90N1

更新时间: 2024-09-18 20:35:19
品牌 Logo 应用领域
恒忆 - NUMONYX 光电二极管内存集成电路
页数 文件大小 规格书
54页 327K
描述
Flash, 4MX16, 90ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48

M28W640CB90N1 技术参数

生命周期:Obsolete零件包装代码:TSOP
包装说明:12 X 20 MM, PLASTIC, TSOP-48针数:48
Reach Compliance Code:unknownECCN代码:3A991.B.1.A
HTS代码:8542.32.00.51风险等级:5.12
Is Samacsys:N最长访问时间:90 ns
其他特性:BOTTOM BOOT BLOCK启动块:BOTTOM
JESD-30 代码:R-PDSO-G48长度:18.4 mm
内存密度:67108864 bit内存集成电路类型:FLASH
内存宽度:16功能数量:1
端子数量:48字数:4194304 words
字数代码:4000000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:4MX16封装主体材料:PLASTIC/EPOXY
封装代码:TSOP1封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
编程电压:3 V认证状态:Not Qualified
座面最大高度:1.2 mm最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
类型:NOR TYPE宽度:12 mm
Base Number Matches:1

M28W640CB90N1 数据手册

 浏览型号M28W640CB90N1的Datasheet PDF文件第2页浏览型号M28W640CB90N1的Datasheet PDF文件第3页浏览型号M28W640CB90N1的Datasheet PDF文件第4页浏览型号M28W640CB90N1的Datasheet PDF文件第5页浏览型号M28W640CB90N1的Datasheet PDF文件第6页浏览型号M28W640CB90N1的Datasheet PDF文件第7页 
M28W640CT  
M28W640CB  
64 Mbit (4Mb x16, Boot Block)  
3V Supply Flash Memory  
PRELIMINARY DATA  
FEATURES SUMMARY  
SUPPLY VOLTAGE  
Figure 1. Packages  
– V = 2.7V to 3.6V Core Power Supply  
DD  
– V  
= 1.65V to 3.3V for Input/Output  
DDQ  
FBGA  
– V = 12V for fast Program (optional)  
PP  
ACCESS TIME  
– 3.0V to 3.6V: 80ns  
TFBGA48 (ZB)  
8 x 6 ball array  
– 2.7V to 3.6V: 90ns  
PROGRAMMING TIME:  
– 10µs typical  
– Double Word Programming Option  
– Quadruple Word Programming Option  
COMMON FLASH INTERFACE  
MEMORY BLOCKS  
– Parameter Blocks (Top or Bottom location)  
– Main Blocks  
TSOP48 (N)  
12 x 20mm  
BLOCK LOCKING  
– All blocks locked at Power Up  
– Any combination of blocks can be locked  
– WP for Block Lock-Down  
SECURITY  
– 128 bit user Programmable OTP cells  
– 64 bit unique device identifier  
– One Parameter Block Permanently Lockable  
AUTOMATIC STAND-BY MODE  
PROGRAM and ERASE SUSPEND  
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 20h  
– Top Device Code, M28W640CT: 8848h  
– Bottom Device Code, M28W640CB: 8849h  
November 2001  
1/54  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.  

与M28W640CB90N1相关器件

型号 品牌 获取价格 描述 数据表
M28W640CB90N1T NUMONYX

获取价格

Flash, 4MX16, 90ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48
M28W640CB90N1T STMICROELECTRONICS

获取价格

64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory
M28W640CB90N6 NUMONYX

获取价格

4MX16 FLASH 3V PROM, 90ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48
M28W640CB90N6T STMICROELECTRONICS

获取价格

64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory
M28W640CB90ZB1 STMICROELECTRONICS

获取价格

4MX16 FLASH 3V PROM, 90ns, PBGA48, 0.75 MM PITCH, TFBGA-48
M28W640CB90ZB1 NUMONYX

获取价格

Flash, 4MX16, 90ns, PBGA48, 0.75 MM PITCH, TFBGA-48
M28W640CB90ZB1T STMICROELECTRONICS

获取价格

64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory
M28W640CB90ZB6 NUMONYX

获取价格

Flash, 4MX16, 90ns, PBGA48, 0.75 MM PITCH, TFBGA-48
M28W640CB90ZB6T STMICROELECTRONICS

获取价格

64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory
M28W640CB90ZB6T NUMONYX

获取价格

Flash, 4MX16, 90ns, PBGA48, 0.75 MM PITCH, TFBGA-48