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M28W640CB80N1T PDF预览

M28W640CB80N1T

更新时间: 2024-09-18 20:35:19
品牌 Logo 应用领域
恒忆 - NUMONYX 光电二极管内存集成电路
页数 文件大小 规格书
54页 327K
描述
Flash, 4MX16, 80ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48

M28W640CB80N1T 技术参数

生命周期:Obsolete零件包装代码:TSOP
包装说明:12 X 20 MM, PLASTIC, TSOP-48针数:48
Reach Compliance Code:unknownECCN代码:3A991.B.1.A
HTS代码:8542.32.00.51风险等级:5.4
最长访问时间:80 ns其他特性:BOTTOM BOOT BLOCK
启动块:BOTTOMJESD-30 代码:R-PDSO-G48
长度:18.4 mm内存密度:67108864 bit
内存集成电路类型:FLASH内存宽度:16
功能数量:1端子数量:48
字数:4194304 words字数代码:4000000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:4MX16
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL编程电压:3 V
认证状态:Not Qualified座面最大高度:1.2 mm
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL类型:NOR TYPE
宽度:12 mmBase Number Matches:1

M28W640CB80N1T 数据手册

 浏览型号M28W640CB80N1T的Datasheet PDF文件第2页浏览型号M28W640CB80N1T的Datasheet PDF文件第3页浏览型号M28W640CB80N1T的Datasheet PDF文件第4页浏览型号M28W640CB80N1T的Datasheet PDF文件第5页浏览型号M28W640CB80N1T的Datasheet PDF文件第6页浏览型号M28W640CB80N1T的Datasheet PDF文件第7页 
M28W640CT  
M28W640CB  
64 Mbit (4Mb x16, Boot Block)  
3V Supply Flash Memory  
PRELIMINARY DATA  
FEATURES SUMMARY  
SUPPLY VOLTAGE  
Figure 1. Packages  
– V = 2.7V to 3.6V Core Power Supply  
DD  
– V  
= 1.65V to 3.3V for Input/Output  
DDQ  
FBGA  
– V = 12V for fast Program (optional)  
PP  
ACCESS TIME  
– 3.0V to 3.6V: 80ns  
TFBGA48 (ZB)  
8 x 6 ball array  
– 2.7V to 3.6V: 90ns  
PROGRAMMING TIME:  
– 10µs typical  
– Double Word Programming Option  
– Quadruple Word Programming Option  
COMMON FLASH INTERFACE  
MEMORY BLOCKS  
– Parameter Blocks (Top or Bottom location)  
– Main Blocks  
TSOP48 (N)  
12 x 20mm  
BLOCK LOCKING  
– All blocks locked at Power Up  
– Any combination of blocks can be locked  
– WP for Block Lock-Down  
SECURITY  
– 128 bit user Programmable OTP cells  
– 64 bit unique device identifier  
– One Parameter Block Permanently Lockable  
AUTOMATIC STAND-BY MODE  
PROGRAM and ERASE SUSPEND  
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 20h  
– Top Device Code, M28W640CT: 8848h  
– Bottom Device Code, M28W640CB: 8849h  
November 2001  
1/54  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.  

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