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M28W640CB80N1 PDF预览

M28W640CB80N1

更新时间: 2024-11-07 15:45:03
品牌 Logo 应用领域
恒忆 - NUMONYX 可编程只读存储器光电二极管内存集成电路
页数 文件大小 规格书
54页 327K
描述
4MX16 FLASH 3V PROM, 80ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48

M28W640CB80N1 数据手册

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M28W640CT  
M28W640CB  
64 Mbit (4Mb x16, Boot Block)  
3V Supply Flash Memory  
PRELIMINARY DATA  
FEATURES SUMMARY  
SUPPLY VOLTAGE  
Figure 1. Packages  
– V = 2.7V to 3.6V Core Power Supply  
DD  
– V  
= 1.65V to 3.3V for Input/Output  
DDQ  
FBGA  
– V = 12V for fast Program (optional)  
PP  
ACCESS TIME  
– 3.0V to 3.6V: 80ns  
TFBGA48 (ZB)  
8 x 6 ball array  
– 2.7V to 3.6V: 90ns  
PROGRAMMING TIME:  
– 10µs typical  
– Double Word Programming Option  
– Quadruple Word Programming Option  
COMMON FLASH INTERFACE  
MEMORY BLOCKS  
– Parameter Blocks (Top or Bottom location)  
– Main Blocks  
TSOP48 (N)  
12 x 20mm  
BLOCK LOCKING  
– All blocks locked at Power Up  
– Any combination of blocks can be locked  
– WP for Block Lock-Down  
SECURITY  
– 128 bit user Programmable OTP cells  
– 64 bit unique device identifier  
– One Parameter Block Permanently Lockable  
AUTOMATIC STAND-BY MODE  
PROGRAM and ERASE SUSPEND  
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 20h  
– Top Device Code, M28W640CT: 8848h  
– Bottom Device Code, M28W640CB: 8849h  
November 2001  
1/54  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.  

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