Datasheet > M28W320CB100ZB1

M28W320CB100ZB1

更新时间： 2024-11-19 04:50:31

品牌	Logo	应用领域
恒忆 - NUMONYX		可编程只读存储器
页数	文件大小	规格书
42页	276K
描述
2MX16 FLASH 3V PROM, 100ns, PBGA47, 6.39 X 10.50 MM, 0.75 MM PITCH, TFBGA-47

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数据手册

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M28W320CB100ZB1 数据手册

M28W320CT

M28W320CB

32 Mbit (2Mb x16, Boot Block) Low Voltage Flash Memory

PRELIMINARY DATA

■ SUPPLY VOLTAGE

– V = 2.7V to 3.6V: for Program, Erase and

Read

– V

= 1.65V or 2.7V: Input/Output option

DDQ

– V = 12V: optional Supply Voltage for fast

µBGA

Program

■ ACCESS TIME

– 2.7V to 3.6V: 90ns

– 2.7V to 3.6V: 100ns

TSOP48 (N)

12 x 20mm

µBGA47 (GB)

8 x 6 solder balls

■ PROGRAMMING TIME:

– 10µs typical

– Double Word Programming Option

■ PROGRAM/ERASE CONTROLLER (P/E.C.)

■ COMMON FLASH INTERFACE

■ MEMORY BLOCKS

Figure 1. Logic Diagram

– Parameter Blocks (Top or Bottom location)

– Main Blocks

■ BLOCK PROTECTION UNPROTECTION

– All Blocks protected at Power Up

– Any combination of blocks can be protected

– WP for block locking

DD DDQ PP

A0-A20

DQ0-DQ15

■ SECURITY

– 64-bit user Programmable OTP cells

– 64-bit unique device identifier

– One Parameter Block Permanently Lockable

■ AUTOMATIC STAND-BY MODE

■ PROGRAM and ERASE SUSPEND

M28W320CT

M28W320CB

■ 100,000 PROGRAM/ERASE CYCLES per

BLOCK

■ 20 YEARS of DATA RETENTION

– Defectivity below 1ppm/year

■ ELECTRONIC SIGNATURE

AI03521

– Manufacturer Code: 20h

– Top Device Code, M28W320CT: 88BAh

– Bottom Device Code, M28W320CB: 88BBh

May 2000

1/42

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

12 3 4 5 6 7...42

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