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M28W160ECT70N1F PDF预览

M28W160ECT70N1F

更新时间: 2024-11-09 05:30:15
品牌 Logo 应用领域
恒忆 - NUMONYX 闪存内存集成电路光电二极管ISM频段
页数 文件大小 规格书
50页 1297K
描述
16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

M28W160ECT70N1F 技术参数

生命周期:Obsolete零件包装代码:TSOP
包装说明:TSSOP,针数:48
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.1
其他特性:TOP BOOT BLOCK启动块:TOP
JESD-30 代码:R-PDSO-G48长度:18.4 mm
内存密度:16777216 bit内存集成电路类型:FLASH
内存宽度:16功能数量:1
端子数量:48字数:1048576 words
字数代码:1000000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:1MX16封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH并行/串行:PARALLEL
编程电压:3 V认证状态:Not Qualified
座面最大高度:1.2 mm最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
类型:NOR TYPE宽度:12 mm
Base Number Matches:1

M28W160ECT70N1F 数据手册

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M28W160ECT  
M28W160ECB  
16 Mbit (1Mb x16, Boot Block)  
3V Supply Flash Memory  
FEATURES SUMMARY  
SUPPLY VOLTAGE  
Figure 1. Packages  
V
V
V
= 2.7V to 3.6V Core Power Supply  
DD  
= 1.65V to 3.6V for Input/Output  
DDQ  
= 12V for fast Program (optional)  
PP  
FBGA  
ACCESS TIME: 70, 85, 90,100ns  
PROGRAMMING TIME:  
10µs typical  
Double Word Programming Option  
TFBGA46 (ZB)  
6.39 x 6.37mm  
COMMON FLASH INTERFACE  
64 bit Security Code  
MEMORY BLOCKS  
Parameter Blocks (Top or Bottom  
location)  
Main Blocks  
BLOCK LOCKING  
All blocks locked at Power Up  
Any combination of blocks can be locked  
WP for Block Lock-Down  
TSOP48 (N)  
12 x 20mm  
SECURITY  
64 bit user Programmable OTP cells  
64 bit unique device identifier  
One Parameter Block Permanently  
Lockable  
AUTOMATIC STAND-BY MODE  
PROGRAM and ERASE SUSPEND  
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
ELECTRONIC SIGNATURE  
Manufacturer Code: 20h  
Top Device Code, M28W160ECT: 88CEh  
Bottom Device Code, M28W160ECB:  
88CFh  
ECOPACK PACKAGES AVAILABLE  
March 2008  
1/50  

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