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M28W160ECT100ZB1T

更新时间： 2024-11-04 23:05:27

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		闪存内存集成电路
页数	文件大小	规格书
50页	860K
描述
16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

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M28W160ECT

M28W160ECB

16 Mbit (1Mb x16, Boot Block)

3V Supply Flash Memory

FEATURES SUMMARY

■

SUPPLY VOLTAGE

Figure 1. Packages

–

V_DD= 2.7V to 3.6V Core Power Supply

V_DDQ= 1.65V to 3.6V for Input/Output

V_PP= 12V for fast Program (optional)

FBGA

■

ACCESS TIME: 70, 85, 90,100ns

PROGRAMMING TIME:

–

10µs typical

Double Word Programming Option

TFBGA46 (ZB)

6.39 x 6.37mm

■

COMMON FLASH INTERFACE

64 bit Security Code

MEMORY BLOCKS

–

Parameter Blocks (Top or Bottom

location)

–

Main Blocks

■

BLOCK LOCKING

–

All blocks locked at Power Up

Any combination of blocks can be locked

WP for Block Lock-Down

TSOP48 (N)

12 x 20mm

SECURITY

–

64 bit user Programmable OTP cells

64 bit unique device identifier

One Parameter Block Permanently

Lockable

■

AUTOMATIC STAND-BY MODE

PROGRAM and ERASE SUSPEND

100,000 PROGRAM/ERASE CYCLES per

BLOCK

■

ELECTRONIC SIGNATURE

–

Manufacturer Code: 20h

Top Device Code, M28W160ECT: 88CEh

Bottom Device Code, M28W160ECB:

88CFh

■

PACKAGES

–

Compliant with Lead-Free Soldering

Processes

–

Lead-Free Versions

November 2004

1/50

12 3 4 5 6 7...50

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