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M28W160ECT100N6F PDF预览

M28W160ECT100N6F

更新时间: 2024-11-05 05:30:15
品牌 Logo 应用领域
恒忆 - NUMONYX 闪存内存集成电路光电二极管
页数 文件大小 规格书
50页 1297K
描述
16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

M28W160ECT100N6F 数据手册

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M28W160ECT  
M28W160ECB  
16 Mbit (1Mb x16, Boot Block)  
3V Supply Flash Memory  
FEATURES SUMMARY  
SUPPLY VOLTAGE  
Figure 1. Packages  
V
V
V
= 2.7V to 3.6V Core Power Supply  
DD  
= 1.65V to 3.6V for Input/Output  
DDQ  
= 12V for fast Program (optional)  
PP  
FBGA  
ACCESS TIME: 70, 85, 90,100ns  
PROGRAMMING TIME:  
10µs typical  
Double Word Programming Option  
TFBGA46 (ZB)  
6.39 x 6.37mm  
COMMON FLASH INTERFACE  
64 bit Security Code  
MEMORY BLOCKS  
Parameter Blocks (Top or Bottom  
location)  
Main Blocks  
BLOCK LOCKING  
All blocks locked at Power Up  
Any combination of blocks can be locked  
WP for Block Lock-Down  
TSOP48 (N)  
12 x 20mm  
SECURITY  
64 bit user Programmable OTP cells  
64 bit unique device identifier  
One Parameter Block Permanently  
Lockable  
AUTOMATIC STAND-BY MODE  
PROGRAM and ERASE SUSPEND  
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
ELECTRONIC SIGNATURE  
Manufacturer Code: 20h  
Top Device Code, M28W160ECT: 88CEh  
Bottom Device Code, M28W160ECB:  
88CFh  
ECOPACK PACKAGES AVAILABLE  
March 2008  
1/50  

M28W160ECT100N6F 替代型号

型号 品牌 替代类型 描述 数据表
S29GL016A10TFI013 SPANSION

功能相似

64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200
S29GL016A10TFI010 SPANSION

功能相似

64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200

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