Datasheet > 存储 > EEPROM> M28C16-120K6TR

M28C16-120K6TR

更新时间： 2024-09-29 22:46:47

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
17页	133K
描述
16 Kbit 2K x 8 Parallel EEPROM With Software Data Protection

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中文翻译

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数据手册

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M28C16-120K6TR 数据手册

M28C16B

M28C17B

16 Kbit (2K x 8) Parallel EEPROM

With Software Data Protection

PRELIMINARY DATA

■ Fast Access Time: 90 ns at V =5V

■ Single Supply Voltage:

– 4.5 V to 5.5 V for M28CxxB

– 2.7 V to 3.6 V for M28CxxB-W

■ Low Power Consumption

■ Fast BYTE and PAGE WRITE (up to 64 Bytes)

– 3 ms at V =4.5 V

– 5 ms at V =2.7 V

■ Enhanced Write Detection and Monitoring:

– Data Polling

PLCC32 (K)

– Toggle Bit

– Page Load Timer Status

■ JEDEC Approved Bytewide Pin-Out

■ Software Data Protection

■ 100000 Erase/Write Cycles (minimum)

■ Data Retention (minimum): 40 Years

DESCRIPTION

The M28C16B and M28C17B devices consist of

2048x8 bits of low power, parallel EEPROM, fabri-

cated with STMicroelectronics’ proprietary single

polysilicon CMOS technology. The devices offer

fast access time, with low power dissipation, and

require a single voltage supply.

Figure 1. Logic Diagram

Table 1. Signal Names

A0-A10

Address Input

A0-A10

DQ0-DQ7

Data Input / Output

Write Enable

M28C16B

M28C17B

Chip Enable

Output Enable

Ready/Busy (M28C17B only)

Supply Voltage

Ground

(M28C17B only)

AI02816

February 1999

1/17

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

12 3 4 5 6 7...17

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