Datasheet > 存储 > EEPROM> M28256-90WBS1T

M28256-90WBS1T

更新时间： 2024-10-26 22:14:27

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
21页	133K
描述
256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection

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中文翻译

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数据手册

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M28256-90WBS1T 数据手册

M28256

256 Kbit (32Kb x8) Parallel EEPROM

with Software Data Protection

PRELIMINARY DATA

FASTACCESSTIME:

– 90ns at 5V

– 120ns at 3V

SINGLE SUPPLY VOLTAGE:

– 5V 10% for M28256

– 2.7V to 3.6V for M28256-xxW

LOW POWER CONSUMPTION

FAST WRITE CYCLE:

PDIP28 (BS)

PLCC32 (KA)

– 64 Bytes Page Write Operation

– Byte or Page Write Cycle

ENHANCED END of WRITEDETECTION:

– Data Polling

– Toggle Bit

STATUS REGISTER

HIGH RELIABILITYDOUBLE POLYSILICON,

CMOS TECHNOLOGY:

SO28 (MS)

300 mils

TSOP28 (NS)

8 x13.4mm

– Endurance >100,000 Erase/Write Cycles

– Data Retention >10 Years

JEDEC APPROVEDBYTEWIDE PIN OUT

ADDRESS and DATA LATCHED ON-CHIP

SOFTWARE DATA PROTECTION

Figure 1. Logic Diagram

DESCRIPTION

The M28256and M28256-Ware 32K x8 low power

ParallelEEPROMfabricatedwithSTMicroelectron-

ics proprietary double polysilicon CMOS technol-

ogy.

A0-A14

DQ0-DQ7

M28256

Table 1. Signal Names

A0-A14

Address Input

Data Input / Output

Write Enable

Chip Enable

DQ0-DQ7

Output Enable

Supply Voltage

Ground

AI01885

V_CC

V_SS

January 1999

1/21

This is preliminaryinformationon a new productnow in developmentor undergoingevaluation.Detail s aresubject to change without notice.

12 3 4 5 6 7...21

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