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M28256-12WBS6T

更新时间: 2024-11-18 22:39:39
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
21页 133K
描述
256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection

M28256-12WBS6T 数据手册

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M28256  
256 Kbit (32Kb x8) Parallel EEPROM  
with Software Data Protection  
PRELIMINARY DATA  
FASTACCESSTIME:  
– 90ns at 5V  
– 120ns at 3V  
SINGLE SUPPLY VOLTAGE:  
±
– 5V 10% for M28256  
28  
– 2.7V to 3.6V for M28256-xxW  
LOW POWER CONSUMPTION  
FAST WRITE CYCLE:  
1
PDIP28 (BS)  
PLCC32 (KA)  
– 64 Bytes Page Write Operation  
– Byte or Page Write Cycle  
ENHANCED END of WRITEDETECTION:  
– Data Polling  
28  
– Toggle Bit  
1
STATUS REGISTER  
HIGH RELIABILITYDOUBLE POLYSILICON,  
CMOS TECHNOLOGY:  
SO28 (MS)  
300 mils  
TSOP28 (NS)  
8 x13.4mm  
– Endurance >100,000 Erase/Write Cycles  
– Data Retention >10 Years  
JEDEC APPROVEDBYTEWIDE PIN OUT  
ADDRESS and DATA LATCHED ON-CHIP  
SOFTWARE DATA PROTECTION  
Figure 1. Logic Diagram  
V
CC  
DESCRIPTION  
The M28256and M28256-Ware 32K x8 low power  
ParallelEEPROMfabricatedwithSTMicroelectron-  
ics proprietary double polysilicon CMOS technol-  
ogy.  
15  
8
A0-A14  
DQ0-DQ7  
W
E
M28256  
Table 1. Signal Names  
A0-A14  
Address Input  
Data Input / Output  
Write Enable  
Chip Enable  
DQ0-DQ7  
G
W
E
V
SS  
G
Output Enable  
Supply Voltage  
Ground  
AI01885  
VCC  
VSS  
January 1999  
1/21  
This is preliminaryinformationon a new productnow in developmentor undergoingevaluation.Detail s aresubject to change without notice.  

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