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M28256-12WBS6 PDF预览

M28256-12WBS6

更新时间: 2024-11-19 13:09:59
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
21页 133K
描述
32KX8 EEPROM 3V, 120ns, PDIP28, 0.600 INCH, PLASTIC, DIP-28

M28256-12WBS6 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:DIP包装说明:0.600 INCH, PLASTIC, DIP-28
针数:28Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.76Is Samacsys:N
最长访问时间:120 ns命令用户界面:NO
数据轮询:YES耐久性:100000 Write/Erase Cycles
JESD-30 代码:R-PDIP-T28JESD-609代码:e3
长度:36.02 mm内存密度:262144 bit
内存集成电路类型:EEPROM内存宽度:8
功能数量:1端子数量:28
字数:32768 words字数代码:32000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:32KX8
封装主体材料:PLASTIC/EPOXY封装代码:DIP
封装等效代码:DIP28,.6封装形状:RECTANGULAR
封装形式:IN-LINE页面大小:64 words
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:3/3.3 V编程电压:3 V
认证状态:Not Qualified座面最大高度:5.08 mm
最大待机电流:0.00002 A子类别:EEPROMs
最大压摆率:0.015 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:NO技术:CMOS
温度等级:INDUSTRIAL端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
切换位:YES宽度:15.24 mm
最长写入周期时间 (tWC):5 msBase Number Matches:1

M28256-12WBS6 数据手册

 浏览型号M28256-12WBS6的Datasheet PDF文件第2页浏览型号M28256-12WBS6的Datasheet PDF文件第3页浏览型号M28256-12WBS6的Datasheet PDF文件第4页浏览型号M28256-12WBS6的Datasheet PDF文件第5页浏览型号M28256-12WBS6的Datasheet PDF文件第6页浏览型号M28256-12WBS6的Datasheet PDF文件第7页 
M28256  
256 Kbit (32Kb x8) Parallel EEPROM  
with Software Data Protection  
PRELIMINARY DATA  
FASTACCESSTIME:  
– 90ns at 5V  
– 120ns at 3V  
SINGLE SUPPLY VOLTAGE:  
±
– 5V 10% for M28256  
28  
– 2.7V to 3.6V for M28256-xxW  
LOW POWER CONSUMPTION  
FAST WRITE CYCLE:  
1
PDIP28 (BS)  
PLCC32 (KA)  
– 64 Bytes Page Write Operation  
– Byte or Page Write Cycle  
ENHANCED END of WRITEDETECTION:  
– Data Polling  
28  
– Toggle Bit  
1
STATUS REGISTER  
HIGH RELIABILITYDOUBLE POLYSILICON,  
CMOS TECHNOLOGY:  
SO28 (MS)  
300 mils  
TSOP28 (NS)  
8 x13.4mm  
– Endurance >100,000 Erase/Write Cycles  
– Data Retention >10 Years  
JEDEC APPROVEDBYTEWIDE PIN OUT  
ADDRESS and DATA LATCHED ON-CHIP  
SOFTWARE DATA PROTECTION  
Figure 1. Logic Diagram  
V
CC  
DESCRIPTION  
The M28256and M28256-Ware 32K x8 low power  
ParallelEEPROMfabricatedwithSTMicroelectron-  
ics proprietary double polysilicon CMOS technol-  
ogy.  
15  
8
A0-A14  
DQ0-DQ7  
W
E
M28256  
Table 1. Signal Names  
A0-A14  
Address Input  
Data Input / Output  
Write Enable  
Chip Enable  
DQ0-DQ7  
G
W
E
V
SS  
G
Output Enable  
Supply Voltage  
Ground  
AI01885  
VCC  
VSS  
January 1999  
1/21  
This is preliminaryinformationon a new productnow in developmentor undergoingevaluation.Detail s aresubject to change without notice.  

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