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M27C2001-12XL6XTR PDF预览

M27C2001-12XL6XTR

更新时间: 2024-11-28 12:58:35
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意法半导体 - STMICROELECTRONICS 存储内存集成电路可编程只读存储器电动程控只读存储器
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16页 115K
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M27C2001-12XL6XTR 数据手册

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M27C2001  
2 Mbit (256Kb x 8) UV EPROM and OTP EPROM  
5V ± 10% SUPPLY VOLTAGE in READ  
OPERATION  
FAST ACCESS TIME: 55ns  
LOW POWER CONSUMPTION:  
– Active Current 30mA at 5MHz  
– Standby Current 100µA  
32  
32  
1
1
FDIP32W (F)  
PDIP32 (B)  
PROGRAMMING VOLTAGE: 12.75V ± 0.25V  
PROGRAMMING TIME: 100µs/byte (typical)  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 20h  
– Device Code: 61h  
LCCC32W (L)  
DESCRIPTION  
The M27C2001 is a high speed 2 Mbit EPROM of-  
fered in the two ranges UV (ultra violet erase) and  
OTP (one time programmable). It is ideally suited  
for microprocessor systems requiring large pro-  
grams and is organised as 262,144 by 8 bits.  
PLCC32 (K)  
TSOP32 (N)  
8 x 20 mm  
The FDIP32W (window ceramic frit-seal package)  
and LCCC32W (leadless chip carrier package)  
have a transparent lids which allow the user to ex-  
pose the chip to ultraviolet light to erase the bit pat-  
tern. A new pattern can then be written to the  
device by following the programming procedure.  
Figure 1. Logic Diagram  
For applications where the content is programmed  
only one time and erasure is not required, the  
M27C2001 is offered in PDIP32, PLCC32 and  
TSOP32 (8 x 20 mm) packages.  
V
V
PP  
CC  
18  
8
A0-A17  
Q0-Q7  
Table 1. Signal Names  
A0-A17  
Address Inputs  
Data Outputs  
Chip Enable  
Output Enable  
Program  
P
M27C2001  
Q0-Q7  
E
E
G
P
G
V
Program Supply  
Supply Voltage  
Ground  
PP  
V
SS  
V
AI00716B  
CC  
V
SS  
April 1999  
1/16  

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