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M27256-F1 PDF预览

M27256-F1

更新时间: 2024-11-16 04:19:07
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器电动程控只读存储器
页数 文件大小 规格书
10页 90K
描述
NMOS 256K 32K x 8 UV EPROM

M27256-F1 数据手册

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M27256  
NMOS 256 Kbit (32Kb x 8) UV EPROM  
NOT FOR NEW DESIGN  
FAST ACCESS TIME: 170ns  
EXTENDED TEMPERATURE RANGE  
SINGLE 5V SUPPLY VOLTAGE  
LOW STANDBY CURRENT: 40mA max  
TTL COMPATIBLE DURING READ and  
PROGRAM  
28  
FAST PROGRAMMING ALGORITHM  
ELECTRONIC SIGNATURE  
1
PROGRAMMING VOLTAGE: 12V  
FDIP28W (F)  
DESCRIPTION  
The M27256 is a 262,144 bit UV erasable and  
electrically programmable memory EPROM. It is  
organized as 32.768 words by 8 bits.  
The M27256 is housed in a 28 pin Window Ceram-  
ic Frit-Seal Dual-in-Line package. The transparent  
lid allows the user to expose the chip to ultraviolet  
light to erase the bit pattern. A new pattern can  
then be written to the device by following the pro-  
gramming procedure.  
Figure 1. Logic Diagram  
V
V
PP  
CC  
15  
8
A0-A14  
Q0-Q7  
E
M27256  
G
V
SS  
AI00767B  
November 2000  
1/10  
This is information on a product still in production but not recommended for new designs.  

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