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M27128AF6 PDF预览

M27128AF6

更新时间: 2024-11-27 22:30:43
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 存储内存集成电路可编程只读存储器电动程控只读存储器
页数 文件大小 规格书
10页 109K
描述
NMOS 128K 16K x 8 UV EPROM

M27128AF6 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:DIP包装说明:WINDOWED, FRIT SEALED, CERAMIC, DIP-28
针数:28Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.32.00.61
风险等级:5.69最长访问时间:250 ns
I/O 类型:COMMONJESD-30 代码:R-GDIP-T28
JESD-609代码:e0内存密度:131072 bit
内存集成电路类型:UVPROM内存宽度:8
功能数量:1端子数量:28
字数:16384 words字数代码:16000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:16KX8
输出特性:3-STATE封装主体材料:CERAMIC, GLASS-SEALED
封装代码:WDIP封装等效代码:DIP28,.6
封装形状:RECTANGULAR封装形式:IN-LINE, WINDOW
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:5 V编程电压:12.5 V
认证状态:Not Qualified座面最大高度:5.71 mm
子类别:EPROMs最大压摆率:0.075 mA
最大供电电压 (Vsup):5.25 V最小供电电压 (Vsup):4.75 V
标称供电电压 (Vsup):5 V表面贴装:NO
技术:NMOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:15.24 mm
Base Number Matches:1

M27128AF6 数据手册

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M27128A  
NMOS 128K (16K x 8) UV EPROM  
FAST ACCESS TIME: 200ns  
EXTENDED TEMPERATURE RANGE  
SINGLE 5 V SUPPLY VOLTAGE  
LOW STANDBY CURRENT: 40mA max  
TTL COMPATIBLE DURING READ and  
PROGRAM  
28  
FAST PROGRAMMING ALGORITHM  
ELECTRONIC SIGNATURE  
1
FDIP28W (F)  
PROGRAMMING VOLTAGE: 12V  
DESCRIPTION  
Figure 1. Logic Diagram  
The M27128A is a 131,072 bit UV erasable and  
electrically programmable memory EPROM. It is  
organized as 16,384 words by 8 bits.  
The M27128A is housed in a 28 Pin Window Ce-  
ramic Frit-Seal Dual-in-Line package. The trans-  
parent lid allows the user to expose the chip to  
ultraviolet light to erase the bit pattern. A new  
pattern can then be written to the device by follow-  
ing the programming procedure.  
V
V
PP  
CC  
14  
8
A0-A13  
Q0-Q7  
P
E
M27128A  
Table 1. Signal Names  
A0 - A13  
Q0 - Q7  
E
Address Inputs  
Data Outputs  
Chip Enable  
Output Enable  
Program  
G
G
V
SS  
P
AI00769B  
VPP  
Program Supply  
Supply Voltage  
Ground  
VCC  
VSS  
March 1995  
1/10  

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