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M25PX80VMW6P PDF预览

M25PX80VMW6P

更新时间: 2024-02-07 06:01:24
品牌 Logo 应用领域
恒忆 - NUMONYX 光电二极管
页数 文件大小 规格书
61页 1379K
描述
Flash, 1MX8, PDSO8

M25PX80VMW6P 数据手册

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M25PX80  
8-Mbit, dual I/O, 4-Kbyte subsector erase,  
serial Flash memory with 75 MHz SPI bus interface  
Features  
„ SPI bus compatible serial interface  
„ 75 MHz (maximum) clock frequency  
„ 2.3 V to 3.6 V single supply voltage  
„ Dual input/output instructions resulting in an  
VFQFPN8 (MP)  
6 × 5 mm  
equivalent clock frequency of 150 MHz:  
– Dual Output Fast Read instruction  
– Dual Input Fast Program instruction  
„ 8 Mbit Flash memory  
– Uniform 4-Kbyte subsectors  
– Uniform 64-Kbyte sectors  
SO8W (MW)  
208 mils  
„ Additional 64-byte user-lockable, one-time  
programmable (OTP) area  
„ Erase capability  
– Subsector (4-Kbyte) granularity  
– Sector (64-Kbyte) granularity  
– Bulk Erase (8 Mbit) in 8 s (typical)  
„ Write protections  
– Software write protection applicable to  
every 64-Kbyte sector (volatile lock bit)  
SO8N (MN)  
150 mils  
– Hardware write protection: protected area  
size defined by three non-volatile bits (BP0,  
BP1 and BP2)  
„ Deep Power-down mode: 5 μA (typical)  
„ Electronic signature  
– JEDEC standard two-byte signature  
(7114h)  
PDIP8 (BA)  
300 mils width  
– Unique ID code (UID) with16 bytes read-  
only, available upon customer request  
„ More than 100 000 write cycles per sector  
„ More than 20 year data retention  
„ Packages  
– RoHS compliant  
December 2008  
Rev 4  
1/60  
www.Numonyx.com  
1

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