Datasheet > M25PX80SVMP6TG

M25PX80SVMP6TG

更新时间： 2023-04-15 00:00:00

品牌	Logo	应用领域
恒忆 - NUMONYX		光电二极管
页数	文件大小	规格书
61页	1379K
描述
Flash, 1MX8, PDSO8

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中文翻译

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数据手册

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M25PX80SVMP6TG 数据手册

M25PX80

8-Mbit, dual I/O, 4-Kbyte subsector erase,

serial Flash memory with 75 MHz SPI bus interface

Features

SPI bus compatible serial interface

75 MHz (maximum) clock frequency

2.3 V to 3.6 V single supply voltage

Dual input/output instructions resulting in an

VFQFPN8 (MP)

6 × 5 mm

equivalent clock frequency of 150 MHz:

– Dual Output Fast Read instruction

– Dual Input Fast Program instruction

8 Mbit Flash memory

– Uniform 4-Kbyte subsectors

– Uniform 64-Kbyte sectors

SO8W (MW)

208 mils

Additional 64-byte user-lockable, one-time

programmable (OTP) area

Erase capability

– Subsector (4-Kbyte) granularity

– Sector (64-Kbyte) granularity

– Bulk Erase (8 Mbit) in 8 s (typical)

Write protections

– Software write protection applicable to

every 64-Kbyte sector (volatile lock bit)

SO8N (MN)

150 mils

– Hardware write protection: protected area

size defined by three non-volatile bits (BP0,

BP1 and BP2)

Deep Power-down mode: 5 μA (typical)

Electronic signature

– JEDEC standard two-byte signature

(7114h)

PDIP8 (BA)

300 mils width

– Unique ID code (UID) with16 bytes read-

only, available upon customer request

More than 100 000 write cycles per sector

More than 20 year data retention

Packages

– RoHS compliant

December 2008

Rev 4

1/60

www.Numonyx.com

12 3 4 5 6 7...61

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