Datasheet > M25PX80STVMN3P

M25PX80STVMN3P

更新时间： 2023-04-15 00:00:00

品牌	Logo	应用领域
恒忆 - NUMONYX		可编程只读存储器电动程控只读存储器电可擦编程只读存储器光电二极管
页数	文件大小	规格书
61页	1379K
描述
EEPROM, 1MX8, Serial, CMOS, PDSO8, SOP-8

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中文翻译

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数据手册

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M25PX80STVMN3P 数据手册

M25PX80

8-Mbit, dual I/O, 4-Kbyte subsector erase,

serial Flash memory with 75 MHz SPI bus interface

Features

SPI bus compatible serial interface

75 MHz (maximum) clock frequency

2.3 V to 3.6 V single supply voltage

Dual input/output instructions resulting in an

VFQFPN8 (MP)

6 × 5 mm

equivalent clock frequency of 150 MHz:

– Dual Output Fast Read instruction

– Dual Input Fast Program instruction

8 Mbit Flash memory

– Uniform 4-Kbyte subsectors

– Uniform 64-Kbyte sectors

SO8W (MW)

208 mils

Additional 64-byte user-lockable, one-time

programmable (OTP) area

Erase capability

– Subsector (4-Kbyte) granularity

– Sector (64-Kbyte) granularity

– Bulk Erase (8 Mbit) in 8 s (typical)

Write protections

– Software write protection applicable to

every 64-Kbyte sector (volatile lock bit)

SO8N (MN)

150 mils

– Hardware write protection: protected area

size defined by three non-volatile bits (BP0,

BP1 and BP2)

Deep Power-down mode: 5 μA (typical)

Electronic signature

– JEDEC standard two-byte signature

(7114h)

PDIP8 (BA)

300 mils width

– Unique ID code (UID) with16 bytes read-

only, available upon customer request

More than 100 000 write cycles per sector

More than 20 year data retention

Packages

– RoHS compliant

December 2008

Rev 4

1/60

www.Numonyx.com

12 3 4 5 6 7...61

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